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IPL65R660E6AUMA1

IPL65R660E6AUMA1

For Reference Only

Part Number IPL65R660E6AUMA1
PNEDA Part # IPL65R660E6AUMA1
Description MOSFET N-CH 4VSON
Manufacturer Infineon Technologies
Unit Price Request a Quote
In Stock 5,202
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Feb 18 - Feb 23 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

IPL65R660E6AUMA1 Resources

Brand Infineon Technologies
ECAD Module ECAD
Mfr. Part NumberIPL65R660E6AUMA1
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single

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IPL65R660E6AUMA1 Specifications

ManufacturerInfineon Technologies
SeriesCoolMOS™ E6
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)650V
Current - Continuous Drain (Id) @ 25°C7A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs660mOhm @ 2.1A, 10V
Vgs(th) (Max) @ Id3.5V @ 200µA
Gate Charge (Qg) (Max) @ Vgs23nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds440pF @ 100V
FET Feature-
Power Dissipation (Max)63W (Tc)
Operating Temperature-40°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageThin-Pak (8x8)
Package / Case4-PowerTSFN

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