IPL65R420E6AUMA1
For Reference Only
| Part Number | IPL65R420E6AUMA1 |
| PNEDA Part # | IPL65R420E6AUMA1 |
| Description | MOSFET N-CH 4VSON |
| Manufacturer | Infineon Technologies |
| Unit Price | Request a Quote |
| In Stock | 4,176 |
| Warehouses | Shipped from Hong Kong SAR |
| Estimated Delivery | Apr 4 - Apr 9 (Choose Expedited Shipping) |
| Guarantee | Up to 1 year [PNEDA-Warranty]* |
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Free shipping on orders over $100. PNEDA is willing to provide you with better services.
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IPL65R420E6AUMA1 Resources
| Brand | Infineon Technologies |
| ECAD Module |
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| Mfr. Part Number | IPL65R420E6AUMA1 |
| Category | Semiconductors › Transistors › Transistors - FETs, MOSFETs - Single |
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Logistics Mode
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- Delivery date: usually 2 to 7 working days.
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IPL65R420E6AUMA1 Specifications
| Manufacturer | Infineon Technologies |
| Series | CoolMOS™ E6 |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 650V |
| Current - Continuous Drain (Id) @ 25°C | 10.1A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Rds On (Max) @ Id, Vgs | 420mOhm @ 3.4A, 10V |
| Vgs(th) (Max) @ Id | 3.5V @ 300µA |
| Gate Charge (Qg) (Max) @ Vgs | 39nC @ 10V |
| Vgs (Max) | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 710pF @ 100V |
| FET Feature | - |
| Power Dissipation (Max) | 83W (Tc) |
| Operating Temperature | -40°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | Thin-Pak (8x8) |
| Package / Case | 4-PowerTSFN |
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Manufacturer Infineon Technologies Series HEXFET® FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 100V Current - Continuous Drain (Id) @ 25°C 17A (Tc) Drive Voltage (Max Rds On, Min Rds On) 4V, 10V Rds On (Max) @ Id, Vgs 100mOhm @ 9A, 10V Vgs(th) (Max) @ Id 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs 34nC @ 5V Vgs (Max) ±16V Input Capacitance (Ciss) (Max) @ Vds 800pF @ 25V FET Feature - Power Dissipation (Max) 79W (Tc) Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Through Hole Supplier Device Package TO-220AB Package / Case TO-220-3 |
