Certifications

iso9001
iso14001
icas
Delivery
security
warranty
roiginal
RoHS
UL
Millions of Electronic Parts In Stock. Price & Lead Time Quotes within 24 Hours.

IPL65R310E6AUMA1

IPL65R310E6AUMA1

For Reference Only

Part Number IPL65R310E6AUMA1
PNEDA Part # IPL65R310E6AUMA1
Description MOSFET N-CH 4VSON
Manufacturer Infineon Technologies
Unit Price Request a Quote
In Stock 8,820
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Apr 4 - Apr 9 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

IPL65R310E6AUMA1 Resources

Brand Infineon Technologies
ECAD Module ECAD
Mfr. Part NumberIPL65R310E6AUMA1
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single

Payment Method

TT Unionpay paypal paypalwtcreditcard alipay wu
  • Penda is not limited to cash transfers. Checks and bill transfers are also accepted.
  • If you need the detailed invoice or tax ID,please email us.
  • Some orders may require a minimum amount of $100.00.
  • Cheque or cash on delivery, processing may take an additional 3-5 days.

Logistics Mode

TNT UPS Fedex EMS DHL
  • Delivery time: At the same day (Order deadline is 2pm, HK Time).
  • Delivery date: usually 2 to 7 working days.
  • It is unable to appoint a date of delivery.
  • Tracking number will be sent once your order has been shipped.
  • It may take up to 24 hours before carriers display the info.

Notes

  • Please confirm the specifications of the products when ordering.
  • If you have special order instructions,please note it on the ordering pages.
  • Registered users can log in to the account to view the order status.
  • You can email us to change the order details before shipment.
  • Orders cannot be canceled after shipping the packages.

At PNEDA, we strive to be the industry leader by quickly and reliably supplying high-quality electronic components to our clients.

Our approach is built around proving our clients with three key advantages:

  • Prompt Responsiveness

    Our team responds quickly to your requests, and gets to work immediately to find your parts.

  • Guaranteed Quality

    Our quality-control processes guard against counterfeits while ensuring reliability and performance.

  • Global Access

    Our worldwide network of trusted resources allows us to find and deliver the specific parts you need.

Hot search vocabulary

  • IPL65R310E6AUMA1 Datasheet
  • where to find IPL65R310E6AUMA1
  • Infineon Technologies

  • Infineon Technologies IPL65R310E6AUMA1
  • IPL65R310E6AUMA1 PDF Datasheet
  • IPL65R310E6AUMA1 Stock

  • IPL65R310E6AUMA1 Pinout
  • Datasheet IPL65R310E6AUMA1
  • IPL65R310E6AUMA1 Supplier

  • Infineon Technologies Distributor
  • IPL65R310E6AUMA1 Price
  • IPL65R310E6AUMA1 Distributor

IPL65R310E6AUMA1 Specifications

ManufacturerInfineon Technologies
SeriesCoolMOS™ E6
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)650V
Current - Continuous Drain (Id) @ 25°C13.1A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs310mOhm @ 4.4A, 10V
Vgs(th) (Max) @ Id3.5V @ 400µA
Gate Charge (Qg) (Max) @ Vgs45nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds950pF @ 100V
FET Feature-
Power Dissipation (Max)104W (Tc)
Operating Temperature-40°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageThin-Pak (8x8)
Package / Case4-PowerTSFN

The Products You May Be Interested In

SCT3022ALHRC11

Rohm Semiconductor

Manufacturer

Rohm Semiconductor

Series

Automotive, AEC-Q101

FET Type

N-Channel

Technology

SiCFET (Silicon Carbide)

Drain to Source Voltage (Vdss)

650V

Current - Continuous Drain (Id) @ 25°C

93A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

18V

Rds On (Max) @ Id, Vgs

28.6mOhm @ 36A, 18V

Vgs(th) (Max) @ Id

5.6V @ 18.2mA

Gate Charge (Qg) (Max) @ Vgs

133nC @ 18V

Vgs (Max)

+22V, -4V

Input Capacitance (Ciss) (Max) @ Vds

2208pF @ 500V

FET Feature

-

Power Dissipation (Max)

339W

Operating Temperature

175°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-247N

Package / Case

TO-247-3

NP48N055KLE-E1-AY

Renesas Electronics America

Manufacturer

Renesas Electronics America

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

55V

Current - Continuous Drain (Id) @ 25°C

48A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

17mOhm @ 24A, 10V

Vgs(th) (Max) @ Id

2.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

60nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

3000pF @ 25V

FET Feature

-

Power Dissipation (Max)

1.8W (Ta), 85W (Tc)

Operating Temperature

175°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

TO-263

Package / Case

TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

PMPB85ENEAX

Nexperia

Manufacturer

Nexperia USA Inc.

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

60V

Current - Continuous Drain (Id) @ 25°C

3A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

95mOhm @ 3A, 10V

Vgs(th) (Max) @ Id

2.7V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

9.2nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

305pF @ 30V

FET Feature

-

Power Dissipation (Max)

1.6W (Ta), 15.6W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

DFN2020MD-6

Package / Case

6-UDFN Exposed Pad

IRF1902PBF

Infineon Technologies

Manufacturer

Infineon Technologies

Series

HEXFET®

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

20V

Current - Continuous Drain (Id) @ 25°C

4.2A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

2.7V, 4.5V

Rds On (Max) @ Id, Vgs

85mOhm @ 4A, 4.5V

Vgs(th) (Max) @ Id

700mV @ 250µA

Gate Charge (Qg) (Max) @ Vgs

7.5nC @ 4.5V

Vgs (Max)

±12V

Input Capacitance (Ciss) (Max) @ Vds

310pF @ 15V

FET Feature

-

Power Dissipation (Max)

2.5W (Ta)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

8-SO

Package / Case

8-SOIC (0.154", 3.90mm Width)

IRLML5103TRPBF

Infineon Technologies

Manufacturer

Infineon Technologies

Series

HEXFET®

FET Type

P-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

30V

Current - Continuous Drain (Id) @ 25°C

760mA (Ta)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

600mOhm @ 600mA, 10V

Vgs(th) (Max) @ Id

1V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

5.1nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

75pF @ 25V

FET Feature

-

Power Dissipation (Max)

540mW (Ta)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

Micro3™/SOT-23

Package / Case

TO-236-3, SC-59, SOT-23-3

Recently Sold

ALDP112W

ALDP112W

Panasonic Electric Works

RELAY GEN PURPOSE SPST 5A 12V

ATXMEGA16A4U-AUR

ATXMEGA16A4U-AUR

Microchip Technology

IC MCU 8/16BIT 16KB FLASH 44TQFP

RT0603DRD07200RL

RT0603DRD07200RL

Yageo

RES SMD 200 OHM 0.5% 1/10W 0603

SI8901D-A01-GS

SI8901D-A01-GS

Silicon Labs

IC ADC 10BIT SAR 16SOIC

LM211DT

LM211DT

STMicroelectronics

IC VOLTAGE COMPARATOR 8-SOIC

B560C-13-F

B560C-13-F

Diodes Incorporated

DIODE SCHOTTKY 60V 5A SMC

3224W-1-502E

3224W-1-502E

Bourns

TRIMMER 5K OHM 0.25W J LEAD TOP

DSC1001DI5-024.0000

DSC1001DI5-024.0000

Microchip Technology

MEMS OSC XO 24.0000MHZ CMOS SMD

JAN2N2222A

JAN2N2222A

Microsemi

TRANS NPN 50V 0.8A

NC7SZ125M5X

NC7SZ125M5X

ON Semiconductor

IC BUF NON-INVERT 5.5V SOT23-5

11R472C

11R472C

Murata Power Solutions

FIXED IND 4.7UH 1.3A 90 MOHM TH

SP0503BAHT

SP0503BAHT

Littelfuse

TVS DIODE 5.5V 8.5V SOT143-4