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IPL65R1K0C6SATMA1

IPL65R1K0C6SATMA1

For Reference Only

Part Number IPL65R1K0C6SATMA1
PNEDA Part # IPL65R1K0C6SATMA1
Description MOSFET N-CH 8TSON
Manufacturer Infineon Technologies
Unit Price Request a Quote
In Stock 3,798
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Mar 21 - Mar 26 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

IPL65R1K0C6SATMA1 Resources

Brand Infineon Technologies
ECAD Module ECAD
Mfr. Part NumberIPL65R1K0C6SATMA1
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single

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IPL65R1K0C6SATMA1 Specifications

ManufacturerInfineon Technologies
SeriesCoolMOS™ C6
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)650V
Current - Continuous Drain (Id) @ 25°C4.2A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs1Ohm @ 1.5A, 10V
Vgs(th) (Max) @ Id3.5V @ 150µA
Gate Charge (Qg) (Max) @ Vgs15nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds328pF @ 100V
FET Feature-
Power Dissipation (Max)34.7W (Tc)
Operating Temperature-40°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageThin-PAK (5x6)
Package / Case8-PowerTDFN

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Rds On (Max) @ Id, Vgs

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