IPL65R1K0C6SATMA1
For Reference Only
| Part Number | IPL65R1K0C6SATMA1 |
| PNEDA Part # | IPL65R1K0C6SATMA1 |
| Description | MOSFET N-CH 8TSON |
| Manufacturer | Infineon Technologies |
| Unit Price | Request a Quote |
| In Stock | 3,798 |
| Warehouses | Shipped from Hong Kong SAR |
| Estimated Delivery | Mar 18 - Mar 23 (Choose Expedited Shipping) |
| Guarantee | Up to 1 year [PNEDA-Warranty]* |
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Free shipping on orders over $100. PNEDA is willing to provide you with better services.
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IPL65R1K0C6SATMA1 Resources
| Brand | Infineon Technologies |
| ECAD Module |
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| Mfr. Part Number | IPL65R1K0C6SATMA1 |
| Category | Semiconductors › Transistors › Transistors - FETs, MOSFETs - Single |
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IPL65R1K0C6SATMA1 Specifications
| Manufacturer | Infineon Technologies |
| Series | CoolMOS™ C6 |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 650V |
| Current - Continuous Drain (Id) @ 25°C | 4.2A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Rds On (Max) @ Id, Vgs | 1Ohm @ 1.5A, 10V |
| Vgs(th) (Max) @ Id | 3.5V @ 150µA |
| Gate Charge (Qg) (Max) @ Vgs | 15nC @ 10V |
| Vgs (Max) | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 328pF @ 100V |
| FET Feature | - |
| Power Dissipation (Max) | 34.7W (Tc) |
| Operating Temperature | -40°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | Thin-PAK (5x6) |
| Package / Case | 8-PowerTDFN |
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Manufacturer Toshiba Semiconductor and Storage Series U-MOSVIII-H FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 100V Current - Continuous Drain (Id) @ 25°C 55A (Ta) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 6.5mOhm @ 27.5A, 10V Vgs(th) (Max) @ Id 4V @ 500µA Gate Charge (Qg) (Max) @ Vgs 49nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 3280pF @ 10V FET Feature - Power Dissipation (Max) 157W (Tc) Operating Temperature 175°C (TJ) Mounting Type Surface Mount Supplier Device Package DPAK+ Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Manufacturer Toshiba Semiconductor and Storage Series U-MOSVI FET Type P-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 20V Current - Continuous Drain (Id) @ 25°C 3A (Ta) Drive Voltage (Max Rds On, Min Rds On) 1.5V, 4.5V Rds On (Max) @ Id, Vgs 103mOhm @ 1A, 4.5V Vgs(th) (Max) @ Id 1V @ 1mA Gate Charge (Qg) (Max) @ Vgs 4.6nC @ 4.5V Vgs (Max) +6V, -8V Input Capacitance (Ciss) (Max) @ Vds 270pF @ 10V FET Feature - Power Dissipation (Max) 500mW (Ta) Operating Temperature 150°C Mounting Type Surface Mount Supplier Device Package UFM Package / Case 3-SMD, Flat Leads |
