Certifications

iso9001
iso14001
icas
Delivery
security
warranty
roiginal
RoHS
UL
Millions of Electronic Parts In Stock. Price & Lead Time Quotes within 24 Hours.

IPI90N06S404AKSA1

IPI90N06S404AKSA1

For Reference Only

Part Number IPI90N06S404AKSA1
PNEDA Part # IPI90N06S404AKSA1
Description MOSFET N-CH 60V 90A TO262-3
Manufacturer Infineon Technologies
Unit Price Request a Quote
In Stock 7,344
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Apr 4 - Apr 9 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

IPI90N06S404AKSA1 Resources

Brand Infineon Technologies
ECAD Module ECAD
Mfr. Part NumberIPI90N06S404AKSA1
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
IPI90N06S404AKSA1, IPI90N06S404AKSA1 Datasheet (Total Pages: 9, Size: 170.37 KB)
PDFIPI90N06S404AKSA2 Datasheet Cover
IPI90N06S404AKSA2 Datasheet Page 2 IPI90N06S404AKSA2 Datasheet Page 3 IPI90N06S404AKSA2 Datasheet Page 4 IPI90N06S404AKSA2 Datasheet Page 5 IPI90N06S404AKSA2 Datasheet Page 6 IPI90N06S404AKSA2 Datasheet Page 7 IPI90N06S404AKSA2 Datasheet Page 8 IPI90N06S404AKSA2 Datasheet Page 9

Payment Method

TT Unionpay paypal paypalwtcreditcard alipay wu
  • Penda is not limited to cash transfers. Checks and bill transfers are also accepted.
  • If you need the detailed invoice or tax ID,please email us.
  • Some orders may require a minimum amount of $100.00.
  • Cheque or cash on delivery, processing may take an additional 3-5 days.

Logistics Mode

TNT UPS Fedex EMS DHL
  • Delivery time: At the same day (Order deadline is 2pm, HK Time).
  • Delivery date: usually 2 to 7 working days.
  • It is unable to appoint a date of delivery.
  • Tracking number will be sent once your order has been shipped.
  • It may take up to 24 hours before carriers display the info.

Notes

  • Please confirm the specifications of the products when ordering.
  • If you have special order instructions,please note it on the ordering pages.
  • Registered users can log in to the account to view the order status.
  • You can email us to change the order details before shipment.
  • Orders cannot be canceled after shipping the packages.

At PNEDA, we strive to be the industry leader by quickly and reliably supplying high-quality electronic components to our clients.

Our approach is built around proving our clients with three key advantages:

  • Prompt Responsiveness

    Our team responds quickly to your requests, and gets to work immediately to find your parts.

  • Guaranteed Quality

    Our quality-control processes guard against counterfeits while ensuring reliability and performance.

  • Global Access

    Our worldwide network of trusted resources allows us to find and deliver the specific parts you need.

Hot search vocabulary

  • IPI90N06S404AKSA1 Datasheet
  • where to find IPI90N06S404AKSA1
  • Infineon Technologies

  • Infineon Technologies IPI90N06S404AKSA1
  • IPI90N06S404AKSA1 PDF Datasheet
  • IPI90N06S404AKSA1 Stock

  • IPI90N06S404AKSA1 Pinout
  • Datasheet IPI90N06S404AKSA1
  • IPI90N06S404AKSA1 Supplier

  • Infineon Technologies Distributor
  • IPI90N06S404AKSA1 Price
  • IPI90N06S404AKSA1 Distributor

IPI90N06S404AKSA1 Specifications

ManufacturerInfineon Technologies
SeriesOptiMOS™
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)60V
Current - Continuous Drain (Id) @ 25°C90A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs4mOhm @ 90A, 10V
Vgs(th) (Max) @ Id4V @ 90µA
Gate Charge (Qg) (Max) @ Vgs128nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds10400pF @ 25V
FET Feature-
Power Dissipation (Max)150W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackagePG-TO262-3
Package / CaseTO-262-3 Long Leads, I²Pak, TO-262AA

The Products You May Be Interested In

APT58MJ50J

Microsemi

Manufacturer

Microsemi Corporation

Series

POWER MOS 8™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

500V

Current - Continuous Drain (Id) @ 25°C

58A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

65mOhm @ 42A, 10V

Vgs(th) (Max) @ Id

5V @ 2.5mA

Gate Charge (Qg) (Max) @ Vgs

340nC @ 10V

Vgs (Max)

±30V

Input Capacitance (Ciss) (Max) @ Vds

13500pF @ 25V

FET Feature

-

Power Dissipation (Max)

540W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Chassis Mount

Supplier Device Package

ISOTOP®

Package / Case

SOT-227-4, miniBLOC

SSM6J801R,LF

Toshiba Semiconductor and Storage

Manufacturer

Toshiba Semiconductor and Storage

Series

U-MOSVI

FET Type

P-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

20V

Current - Continuous Drain (Id) @ 25°C

6A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

1.5V, 4.5V

Rds On (Max) @ Id, Vgs

32.5mOhm @ 3A, 4.5V

Vgs(th) (Max) @ Id

1V @ 1mA

Gate Charge (Qg) (Max) @ Vgs

12.8nC @ 4.5V

Vgs (Max)

+6V, -8V

Input Capacitance (Ciss) (Max) @ Vds

840pF @ 10V

FET Feature

-

Power Dissipation (Max)

1.5W (Ta)

Operating Temperature

150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

6-TSOP-F

Package / Case

6-SMD, Flat Leads

NTMFS4C09NT1G

ON Semiconductor

Manufacturer

ON Semiconductor

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

30V

Current - Continuous Drain (Id) @ 25°C

9A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

5.8mOhm @ 30A, 10V

Vgs(th) (Max) @ Id

2.1V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

10.9nC @ 4.5V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

1252pF @ 15V

FET Feature

-

Power Dissipation (Max)

760mW (Ta), 25.5W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

5-DFN (5x6) (8-SOFL)

Package / Case

8-PowerTDFN

SSM3J14TTE85LF

Toshiba Semiconductor and Storage

Manufacturer

Toshiba Semiconductor and Storage

Series

U-MOSII

FET Type

P-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

30V

Current - Continuous Drain (Id) @ 25°C

2.7A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

4V, 10V

Rds On (Max) @ Id, Vgs

85mOhm @ 1.35A, 10V

Vgs(th) (Max) @ Id

-

Gate Charge (Qg) (Max) @ Vgs

-

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

413pF @ 15V

FET Feature

-

Power Dissipation (Max)

700mW (Ta)

Operating Temperature

150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

TSM

Package / Case

TO-236-3, SC-59, SOT-23-3

IRFP054PBF

Vishay Siliconix

Manufacturer

Vishay Siliconix

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

60V

Current - Continuous Drain (Id) @ 25°C

70A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

14mOhm @ 54A, 10V

Vgs(th) (Max) @ Id

4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

160nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

4500pF @ 25V

FET Feature

-

Power Dissipation (Max)

230W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-247-3

Package / Case

TO-247-3

Recently Sold

DS1670E

DS1670E

Maxim Integrated

IC RTC SYSTEM CTRLR SER 20-TSSOP

UUX1E470MCL1GS

UUX1E470MCL1GS

Nichicon

CAP ALUM 47UF 20% 25V SMD

LTC6363IMS8#PBF

LTC6363IMS8#PBF

Linear Technology/Analog Devices

IC OPAMP DIFF 1 CIRCUIT 8MSOP

D2-24044-MR

D2-24044-MR

Renesas Electronics America Inc.

IC DGTL AMP AUDIO PWR D 38HTSSOP

AT24C256-10TI-2.7

AT24C256-10TI-2.7

Microchip Technology

IC EEPROM 256K I2C 1MHZ 8TSSOP

RT0603DRD07200RL

RT0603DRD07200RL

Yageo

RES SMD 200 OHM 0.5% 1/10W 0603

CY2305SXC-1

CY2305SXC-1

Cypress Semiconductor

IC CLK ZDB 5OUT 133MHZ 8SOIC

NAND256W3A2BZA6E

NAND256W3A2BZA6E

Micron Technology Inc.

IC FLASH 256M PARALLEL 55VFBGA

SF-1206F200-2

SF-1206F200-2

Bourns

FUSE BOARD MOUNT 2A 63VDC 1206

LTC3676HUJ-1#TRPBF

LTC3676HUJ-1#TRPBF

Linear Technology/Analog Devices

IC REG CONV I.MX6 7OUT 40QFN

ALDP112W

ALDP112W

Panasonic Electric Works

RELAY GEN PURPOSE SPST 5A 12V

RJH60D5BDPQ-E0#T2

RJH60D5BDPQ-E0#T2

Renesas Electronics America

IGBT 600V 75A 200W TO-247