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IPI80N06S4L07AKSA1

IPI80N06S4L07AKSA1

For Reference Only

Part Number IPI80N06S4L07AKSA1
PNEDA Part # IPI80N06S4L07AKSA1
Description MOSFET N-CH 60V 80A TO262-3
Manufacturer Infineon Technologies
Unit Price Request a Quote
In Stock 6,714
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Mar 31 - Apr 5 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

IPI80N06S4L07AKSA1 Resources

Brand Infineon Technologies
ECAD Module ECAD
Mfr. Part NumberIPI80N06S4L07AKSA1
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single

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IPI80N06S4L07AKSA1 Specifications

ManufacturerInfineon Technologies
SeriesOptiMOS™
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)60V
Current - Continuous Drain (Id) @ 25°C80A (Tc)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Rds On (Max) @ Id, Vgs6.7mOhm @ 80A, 10V
Vgs(th) (Max) @ Id2.2V @ 40µA
Gate Charge (Qg) (Max) @ Vgs75nC @ 10V
Vgs (Max)±16V
Input Capacitance (Ciss) (Max) @ Vds5680pF @ 25V
FET Feature-
Power Dissipation (Max)79W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackagePG-TO262-3
Package / CaseTO-262-3 Long Leads, I²Pak, TO-262AA

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