IPI80N06S3L-05
For Reference Only
| Part Number | IPI80N06S3L-05 |
| PNEDA Part # | IPI80N06S3L-05 |
| Description | MOSFET N-CH 55V 80A TO-262 |
| Manufacturer | Infineon Technologies |
| Unit Price | Request a Quote |
| In Stock | 6,822 |
| Warehouses | Shipped from Hong Kong SAR |
| Estimated Delivery | Feb 18 - Feb 23 (Choose Expedited Shipping) |
| Guarantee | Up to 1 year [PNEDA-Warranty]* |
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Free shipping on orders over $100. PNEDA is willing to provide you with better services.
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IPI80N06S3L-05 Resources
| Brand | Infineon Technologies |
| ECAD Module |
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| Mfr. Part Number | IPI80N06S3L-05 |
| Category | Semiconductors › Transistors › Transistors - FETs, MOSFETs - Single |
| Datasheet |
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IPI80N06S3L-05 Specifications
| Manufacturer | Infineon Technologies |
| Series | OptiMOS™ |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 55V |
| Current - Continuous Drain (Id) @ 25°C | 80A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 5V, 10V |
| Rds On (Max) @ Id, Vgs | 4.8mOhm @ 69A, 10V |
| Vgs(th) (Max) @ Id | 2.2V @ 115µA |
| Gate Charge (Qg) (Max) @ Vgs | 273nC @ 10V |
| Vgs (Max) | ±16V |
| Input Capacitance (Ciss) (Max) @ Vds | 13060pF @ 25V |
| FET Feature | - |
| Power Dissipation (Max) | 165W (Tc) |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Mounting Type | Through Hole |
| Supplier Device Package | PG-TO262-3 |
| Package / Case | TO-262-3 Long Leads, I²Pak, TO-262AA |
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Manufacturer Infineon Technologies Series CoolMOS™ P7 FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 600V Current - Continuous Drain (Id) @ 25°C 26A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 120mOhm @ 8.2A, 10V Vgs(th) (Max) @ Id 4V @ 410µA Gate Charge (Qg) (Max) @ Vgs 36nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 1544pF @ 400V FET Feature - Power Dissipation (Max) 95W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Through Hole Supplier Device Package PG-TO247-4 Package / Case TO-247-4 |
