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IPI80N06S3-07

IPI80N06S3-07

For Reference Only

Part Number IPI80N06S3-07
PNEDA Part # IPI80N06S3-07
Description MOSFET N-CH 55V 80A TO-262
Manufacturer Infineon Technologies
Unit Price Request a Quote
In Stock 2,880
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Apr 16 - Apr 21 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

IPI80N06S3-07 Resources

Brand Infineon Technologies
ECAD Module ECAD
Mfr. Part NumberIPI80N06S3-07
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
IPI80N06S3-07, IPI80N06S3-07 Datasheet (Total Pages: 9, Size: 189.25 KB)
PDFIPP80N06S3-07 Datasheet Cover
IPP80N06S3-07 Datasheet Page 2 IPP80N06S3-07 Datasheet Page 3 IPP80N06S3-07 Datasheet Page 4 IPP80N06S3-07 Datasheet Page 5 IPP80N06S3-07 Datasheet Page 6 IPP80N06S3-07 Datasheet Page 7 IPP80N06S3-07 Datasheet Page 8 IPP80N06S3-07 Datasheet Page 9

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IPI80N06S3-07 Specifications

ManufacturerInfineon Technologies
SeriesOptiMOS™
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)55V
Current - Continuous Drain (Id) @ 25°C80A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs6.8mOhm @ 51A, 10V
Vgs(th) (Max) @ Id4V @ 80µA
Gate Charge (Qg) (Max) @ Vgs170nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds7768pF @ 25V
FET Feature-
Power Dissipation (Max)135W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackagePG-TO262-3
Package / CaseTO-262-3 Long Leads, I²Pak, TO-262AA

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