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IPI80N06S2L05AKSA2

IPI80N06S2L05AKSA2

For Reference Only

Part Number IPI80N06S2L05AKSA2
PNEDA Part # IPI80N06S2L05AKSA2
Description MOSFET N-CH 55V 80A TO262-3
Manufacturer Infineon Technologies
Unit Price Request a Quote
In Stock 8,406
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Apr 30 - May 5 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

IPI80N06S2L05AKSA2 Resources

Brand Infineon Technologies
ECAD Module ECAD
Mfr. Part NumberIPI80N06S2L05AKSA2
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single

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IPI80N06S2L05AKSA2 Specifications

ManufacturerInfineon Technologies
SeriesOptiMOS™
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)55V
Current - Continuous Drain (Id) @ 25°C80A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs4.8mOhm @ 80A, 10V
Vgs(th) (Max) @ Id2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs230nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds5700pF @ 25V
FET Feature-
Power Dissipation (Max)300W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackagePG-TO262-3-1
Package / CaseTO-262-3 Long Leads, I²Pak, TO-262AA

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