IPI80N04S403AKSA1
For Reference Only
| Part Number | IPI80N04S403AKSA1 |
| PNEDA Part # | IPI80N04S403AKSA1 |
| Description | MOSFET N-CH 40V 80A TO262-3-1 |
| Manufacturer | Infineon Technologies |
| Unit Price | Request a Quote |
| In Stock | 7,212 |
| Warehouses | Shipped from Hong Kong SAR |
| Estimated Delivery | Mar 21 - Mar 26 (Choose Expedited Shipping) |
| Guarantee | Up to 1 year [PNEDA-Warranty]* |
|
Free shipping on orders over $100. PNEDA is willing to provide you with better services.
|
|
|
|
|
IPI80N04S403AKSA1 Resources
| Brand | Infineon Technologies |
| ECAD Module |
|
| Mfr. Part Number | IPI80N04S403AKSA1 |
| Category | Semiconductors › Transistors › Transistors - FETs, MOSFETs - Single |
Payment Method
- Penda is not limited to cash transfers. Checks and bill transfers are also accepted.
- If you need the detailed invoice or tax ID,please email us.
- Some orders may require a minimum amount of $100.00.
- Cheque or cash on delivery, processing may take an additional 3-5 days.
Logistics Mode
- Delivery time: At the same day (Order deadline is 2pm, HK Time).
- Delivery date: usually 2 to 7 working days.
- It is unable to appoint a date of delivery.
- Tracking number will be sent once your order has been shipped.
- It may take up to 24 hours before carriers display the info.
Notes
- Please confirm the specifications of the products when ordering.
- If you have special order instructions,please note it on the ordering pages.
- Registered users can log in to the account to view the order status.
- You can email us to change the order details before shipment.
- Orders cannot be canceled after shipping the packages.
At PNEDA, we strive to be the industry leader by quickly and reliably supplying high-quality electronic components to our clients.
Our approach is built around proving our clients with three key advantages:
Prompt Responsiveness
Our team responds quickly to your requests, and gets to work immediately to find your parts.
Guaranteed Quality
Our quality-control processes guard against counterfeits while ensuring reliability and performance.
Global Access
Our worldwide network of trusted resources allows us to find and deliver the specific parts you need.
Hot search vocabulary
- IPI80N04S403AKSA1 Datasheet
- where to find IPI80N04S403AKSA1
- Infineon Technologies
- Infineon Technologies IPI80N04S403AKSA1
- IPI80N04S403AKSA1 PDF Datasheet
- IPI80N04S403AKSA1 Stock
- IPI80N04S403AKSA1 Pinout
- Datasheet IPI80N04S403AKSA1
- IPI80N04S403AKSA1 Supplier
- Infineon Technologies Distributor
- IPI80N04S403AKSA1 Price
- IPI80N04S403AKSA1 Distributor
IPI80N04S403AKSA1 Specifications
| Manufacturer | Infineon Technologies |
| Series | OptiMOS™ |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 40V |
| Current - Continuous Drain (Id) @ 25°C | 80A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Rds On (Max) @ Id, Vgs | 3.7mOhm @ 80A, 10V |
| Vgs(th) (Max) @ Id | 4V @ 53µA |
| Gate Charge (Qg) (Max) @ Vgs | 66nC @ 10V |
| Vgs (Max) | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 5260pF @ 25V |
| FET Feature | - |
| Power Dissipation (Max) | 94W (Tc) |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Mounting Type | Through Hole |
| Supplier Device Package | PG-TO262-3 |
| Package / Case | TO-262-3 Long Leads, I²Pak, TO-262AA |
The Products You May Be Interested In
|
Manufacturer GeneSiC Semiconductor Series - FET Type - Technology SiC (Silicon Carbide Junction Transistor) Drain to Source Voltage (Vdss) 650V Current - Continuous Drain (Id) @ 25°C 4A (Tc) (165°C) Drive Voltage (Max Rds On, Min Rds On) - Rds On (Max) @ Id, Vgs 415mOhm @ 4A Vgs(th) (Max) @ Id - Gate Charge (Qg) (Max) @ Vgs - Vgs (Max) - Input Capacitance (Ciss) (Max) @ Vds 324pF @ 35V FET Feature - Power Dissipation (Max) 125W (Tc) Operating Temperature -55°C ~ 225°C (TJ) Mounting Type Surface Mount Supplier Device Package TO-276 Package / Case TO-276AA |
Manufacturer Vishay Siliconix Series - FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 100V Current - Continuous Drain (Id) @ 25°C 15A (Tc) Drive Voltage (Max Rds On, Min Rds On) 4V, 5V Rds On (Max) @ Id, Vgs 160mOhm @ 9A, 5V Vgs(th) (Max) @ Id 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs 28nC @ 5V Vgs (Max) ±10V Input Capacitance (Ciss) (Max) @ Vds 930pF @ 25V FET Feature - Power Dissipation (Max) 3.7W (Ta), 88W (Tc) Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Surface Mount Supplier Device Package D2PAK Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
Manufacturer STMicroelectronics Series SuperMESH™ FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 650V Current - Continuous Drain (Id) @ 25°C 4.5A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 1.8Ohm @ 2.1A, 10V Vgs(th) (Max) @ Id 4.5V @ 50µA Gate Charge (Qg) (Max) @ Vgs 35nC @ 10V Vgs (Max) ±30V Input Capacitance (Ciss) (Max) @ Vds 680pF @ 25V FET Feature - Power Dissipation (Max) 25W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Through Hole Supplier Device Package TO-220FP Package / Case TO-220-3 Full Pack |
Manufacturer Vishay Siliconix Series TrenchFET® Gen IV FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 30V Current - Continuous Drain (Id) @ 25°C 27A (Ta), 60A (Tc) Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V Rds On (Max) @ Id, Vgs 4.3mOhm @ 10A, 10V Vgs(th) (Max) @ Id 2.4V @ 250µA Gate Charge (Qg) (Max) @ Vgs 32nC @ 10V Vgs (Max) +20V, -16V Input Capacitance (Ciss) (Max) @ Vds 1470pF @ 15V FET Feature - Power Dissipation (Max) 5W (Ta), 38W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package PowerPAK® SO-8 Package / Case PowerPAK® SO-8 |
Manufacturer Infineon Technologies Series HEXFET® FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 80V Current - Continuous Drain (Id) @ 25°C 6.3A (Ta) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 29mOhm @ 3.8A, 10V Vgs(th) (Max) @ Id 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs 57nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 1680pF @ 25V FET Feature - Power Dissipation (Max) 2.5W (Ta) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package 8-SO Package / Case 8-SOIC (0.154", 3.90mm Width) |
