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IPI50CN10NGHKSA1

IPI50CN10NGHKSA1

For Reference Only

Part Number IPI50CN10NGHKSA1
PNEDA Part # IPI50CN10NGHKSA1
Description MOSFET N-CH 100V 20A TO262-3
Manufacturer Infineon Technologies
Unit Price Request a Quote
In Stock 8,388
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Mar 20 - Mar 25 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

IPI50CN10NGHKSA1 Resources

Brand Infineon Technologies
ECAD Module ECAD
Mfr. Part NumberIPI50CN10NGHKSA1
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
IPI50CN10NGHKSA1, IPI50CN10NGHKSA1 Datasheet (Total Pages: 12, Size: 902.19 KB)
PDFIPI50CN10NGHKSA1 Datasheet Cover
IPI50CN10NGHKSA1 Datasheet Page 2 IPI50CN10NGHKSA1 Datasheet Page 3 IPI50CN10NGHKSA1 Datasheet Page 4 IPI50CN10NGHKSA1 Datasheet Page 5 IPI50CN10NGHKSA1 Datasheet Page 6 IPI50CN10NGHKSA1 Datasheet Page 7 IPI50CN10NGHKSA1 Datasheet Page 8 IPI50CN10NGHKSA1 Datasheet Page 9 IPI50CN10NGHKSA1 Datasheet Page 10 IPI50CN10NGHKSA1 Datasheet Page 11

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IPI50CN10NGHKSA1 Specifications

ManufacturerInfineon Technologies
SeriesOptiMOS™
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)100V
Current - Continuous Drain (Id) @ 25°C20A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs50mOhm @ 20A, 10V
Vgs(th) (Max) @ Id4V @ 20µA
Gate Charge (Qg) (Max) @ Vgs16nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds1090pF @ 50V
FET Feature-
Power Dissipation (Max)44W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackagePG-TO262-3
Package / CaseTO-262-3 Long Leads, I²Pak, TO-262AA

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