IPI180N10N3GXKSA1
For Reference Only
| Part Number | IPI180N10N3GXKSA1 |
| PNEDA Part # | IPI180N10N3GXKSA1 |
| Description | MOSFET N-CH 100V 43A TO262-3 |
| Manufacturer | Infineon Technologies |
| Unit Price | Request a Quote |
| In Stock | 2,124 |
| Warehouses | Shipped from Hong Kong SAR |
| Estimated Delivery | Mar 20 - Mar 25 (Choose Expedited Shipping) |
| Guarantee | Up to 1 year [PNEDA-Warranty]* |
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Free shipping on orders over $100. PNEDA is willing to provide you with better services.
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IPI180N10N3GXKSA1 Resources
| Brand | Infineon Technologies |
| ECAD Module |
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| Mfr. Part Number | IPI180N10N3GXKSA1 |
| Category | Semiconductors › Transistors › Transistors - FETs, MOSFETs - Single |
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IPI180N10N3GXKSA1 Specifications
| Manufacturer | Infineon Technologies |
| Series | OptiMOS™ |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 100V |
| Current - Continuous Drain (Id) @ 25°C | 43A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 6V, 10V |
| Rds On (Max) @ Id, Vgs | 18mOhm @ 33A, 10V |
| Vgs(th) (Max) @ Id | 3.5V @ 33µA |
| Gate Charge (Qg) (Max) @ Vgs | 25nC @ 10V |
| Vgs (Max) | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 1800pF @ 50V |
| FET Feature | - |
| Power Dissipation (Max) | 71W (Tc) |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Mounting Type | Through Hole |
| Supplier Device Package | PG-TO262-3 |
| Package / Case | TO-262-3 Long Leads, I²Pak, TO-262AA |
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Manufacturer Renesas Electronics America Series - FET Type - Technology - Drain to Source Voltage (Vdss) - Current - Continuous Drain (Id) @ 25°C - Drive Voltage (Max Rds On, Min Rds On) - Rds On (Max) @ Id, Vgs - Vgs(th) (Max) @ Id - Gate Charge (Qg) (Max) @ Vgs - Vgs (Max) - Input Capacitance (Ciss) (Max) @ Vds - FET Feature - Power Dissipation (Max) - Operating Temperature - Mounting Type - Supplier Device Package - Package / Case - |
Manufacturer Infineon Technologies Series HEXFET® FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 60V Current - Continuous Drain (Id) @ 25°C 120A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 4.2mOhm @ 75A, 10V Vgs(th) (Max) @ Id 4V @ 150µA Gate Charge (Qg) (Max) @ Vgs 120nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 4520pF @ 50V FET Feature - Power Dissipation (Max) 230W (Tc) Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Through Hole Supplier Device Package TO-220AB Package / Case TO-220-3 |
Manufacturer Microsemi Corporation Series POWER MOS 7® FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 1200V Current - Continuous Drain (Id) @ 25°C 9A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 1.5Ohm @ 4.5A, 10V Vgs(th) (Max) @ Id 5V @ 1mA Gate Charge (Qg) (Max) @ Vgs 75nC @ 10V Vgs (Max) ±30V Input Capacitance (Ciss) (Max) @ Vds 2030pF @ 25V FET Feature - Power Dissipation (Max) 300W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Through Hole Supplier Device Package TO-247 [B] Package / Case TO-247-3 |
