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IPI180N10N3GXKSA1

IPI180N10N3GXKSA1

For Reference Only

Part Number IPI180N10N3GXKSA1
PNEDA Part # IPI180N10N3GXKSA1
Description MOSFET N-CH 100V 43A TO262-3
Manufacturer Infineon Technologies
Unit Price Request a Quote
In Stock 2,124
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Mar 20 - Mar 25 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

IPI180N10N3GXKSA1 Resources

Brand Infineon Technologies
ECAD Module ECAD
Mfr. Part NumberIPI180N10N3GXKSA1
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single

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IPI180N10N3GXKSA1 Specifications

ManufacturerInfineon Technologies
SeriesOptiMOS™
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)100V
Current - Continuous Drain (Id) @ 25°C43A (Tc)
Drive Voltage (Max Rds On, Min Rds On)6V, 10V
Rds On (Max) @ Id, Vgs18mOhm @ 33A, 10V
Vgs(th) (Max) @ Id3.5V @ 33µA
Gate Charge (Qg) (Max) @ Vgs25nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds1800pF @ 50V
FET Feature-
Power Dissipation (Max)71W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackagePG-TO262-3
Package / CaseTO-262-3 Long Leads, I²Pak, TO-262AA

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