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IPI120N06S402AKSA2

IPI120N06S402AKSA2

For Reference Only

Part Number IPI120N06S402AKSA2
PNEDA Part # IPI120N06S402AKSA2
Description MOSFET N-CH 60V 120A TO262-3
Manufacturer Infineon Technologies
Unit Price Request a Quote
In Stock 6,894
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Mar 31 - Apr 5 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

IPI120N06S402AKSA2 Resources

Brand Infineon Technologies
ECAD Module ECAD
Mfr. Part NumberIPI120N06S402AKSA2
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
IPI120N06S402AKSA2, IPI120N06S402AKSA2 Datasheet (Total Pages: 9, Size: 170.7 KB)
PDFIPP120N06S402AKSA2 Datasheet Cover
IPP120N06S402AKSA2 Datasheet Page 2 IPP120N06S402AKSA2 Datasheet Page 3 IPP120N06S402AKSA2 Datasheet Page 4 IPP120N06S402AKSA2 Datasheet Page 5 IPP120N06S402AKSA2 Datasheet Page 6 IPP120N06S402AKSA2 Datasheet Page 7 IPP120N06S402AKSA2 Datasheet Page 8 IPP120N06S402AKSA2 Datasheet Page 9

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IPI120N06S402AKSA2 Specifications

ManufacturerInfineon Technologies
SeriesOptiMOS™
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)60V
Current - Continuous Drain (Id) @ 25°C120A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs2.8mOhm @ 100A, 10V
Vgs(th) (Max) @ Id4V @ 140µA
Gate Charge (Qg) (Max) @ Vgs195nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds15750pF @ 25V
FET Feature-
Power Dissipation (Max)188W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackagePG-TO262-3-1
Package / CaseTO-262-3 Long Leads, I²Pak, TO-262AA

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