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IPI100N04S303AKSA1

IPI100N04S303AKSA1

For Reference Only

Part Number IPI100N04S303AKSA1
PNEDA Part # IPI100N04S303AKSA1
Description MOSFET N-CH 40V 100A TO262-3
Manufacturer Infineon Technologies
Unit Price Request a Quote
In Stock 7,992
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Mar 31 - Apr 5 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

IPI100N04S303AKSA1 Resources

Brand Infineon Technologies
ECAD Module ECAD
Mfr. Part NumberIPI100N04S303AKSA1
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
IPI100N04S303AKSA1, IPI100N04S303AKSA1 Datasheet (Total Pages: 9, Size: 196.69 KB)
PDFIPI100N04S303AKSA1 Datasheet Cover
IPI100N04S303AKSA1 Datasheet Page 2 IPI100N04S303AKSA1 Datasheet Page 3 IPI100N04S303AKSA1 Datasheet Page 4 IPI100N04S303AKSA1 Datasheet Page 5 IPI100N04S303AKSA1 Datasheet Page 6 IPI100N04S303AKSA1 Datasheet Page 7 IPI100N04S303AKSA1 Datasheet Page 8 IPI100N04S303AKSA1 Datasheet Page 9

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IPI100N04S303AKSA1 Specifications

ManufacturerInfineon Technologies
SeriesOptiMOS™
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)40V
Current - Continuous Drain (Id) @ 25°C100A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs2.8mOhm @ 80A, 10V
Vgs(th) (Max) @ Id4V @ 150µA
Gate Charge (Qg) (Max) @ Vgs145nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds9600pF @ 25V
FET Feature-
Power Dissipation (Max)214W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackagePG-TO262-3
Package / CaseTO-262-3 Long Leads, I²Pak, TO-262AA

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