IPI040N06N3GXKSA1
For Reference Only
| Part Number | IPI040N06N3GXKSA1 |
| PNEDA Part # | IPI040N06N3GXKSA1 |
| Description | MOSFET N-CH 60V 90A |
| Manufacturer | Infineon Technologies |
| Unit Price | Request a Quote |
| In Stock | 14,844 |
| Warehouses | Shipped from Hong Kong SAR |
| Estimated Delivery | Apr 4 - Apr 9 (Choose Expedited Shipping) |
| Guarantee | Up to 1 year [PNEDA-Warranty]* |
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Free shipping on orders over $100. PNEDA is willing to provide you with better services.
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IPI040N06N3GXKSA1 Resources
| Brand | Infineon Technologies |
| ECAD Module |
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| Mfr. Part Number | IPI040N06N3GXKSA1 |
| Category | Semiconductors › Transistors › Transistors - FETs, MOSFETs - Single |
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IPI040N06N3GXKSA1 Specifications
| Manufacturer | Infineon Technologies |
| Series | OptiMOS™ |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 60V |
| Current - Continuous Drain (Id) @ 25°C | 90A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Rds On (Max) @ Id, Vgs | 4mOhm @ 90A, 10V |
| Vgs(th) (Max) @ Id | 4V @ 90µA |
| Gate Charge (Qg) (Max) @ Vgs | 98nC @ 10V |
| Vgs (Max) | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 11000pF @ 30V |
| FET Feature | - |
| Power Dissipation (Max) | 188W (Tc) |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Mounting Type | Through Hole |
| Supplier Device Package | PG-TO262-3 |
| Package / Case | TO-262-3 Long Leads, I²Pak, TO-262AA |
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Manufacturer Microchip Technology Series - FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 450V Current - Continuous Drain (Id) @ 25°C 136mA Drive Voltage (Max Rds On, Min Rds On) 0V Rds On (Max) @ Id, Vgs 20Ohm @ 150mA, 0V Vgs(th) (Max) @ Id - Gate Charge (Qg) (Max) @ Vgs - Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 360pF @ 25V FET Feature Depletion Mode Power Dissipation (Max) 740mW (Ta) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Through Hole Supplier Device Package TO-92 (TO-226) Package / Case TO-226-3, TO-92-3 (TO-226AA) |
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Manufacturer ON Semiconductor Series - FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 40V Current - Continuous Drain (Id) @ 25°C - Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V Rds On (Max) @ Id, Vgs 3.7mOhm @ 20A, 10V Vgs(th) (Max) @ Id 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs 18nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 1600pF @ 25V FET Feature - Power Dissipation (Max) 3.6W (Ta), 55W (Tc) Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Surface Mount Supplier Device Package 5-DFN (5x6) (8-SOFL) Package / Case 8-PowerTDFN |
