IPI037N08N3GXKSA1
For Reference Only
| Part Number | IPI037N08N3GXKSA1 |
| PNEDA Part # | IPI037N08N3GXKSA1 |
| Description | MOSFET N-CH 80V 100A |
| Manufacturer | Infineon Technologies |
| Unit Price | Request a Quote |
| In Stock | 4,014 |
| Warehouses | Shipped from Hong Kong SAR |
| Estimated Delivery | Mar 21 - Mar 26 (Choose Expedited Shipping) |
| Guarantee | Up to 1 year [PNEDA-Warranty]* |
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Free shipping on orders over $100. PNEDA is willing to provide you with better services.
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IPI037N08N3GXKSA1 Resources
| Brand | Infineon Technologies |
| ECAD Module |
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| Mfr. Part Number | IPI037N08N3GXKSA1 |
| Category | Semiconductors › Transistors › Transistors - FETs, MOSFETs - Single |
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Logistics Mode
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IPI037N08N3GXKSA1 Specifications
| Manufacturer | Infineon Technologies |
| Series | OptiMOS™ |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 80V |
| Current - Continuous Drain (Id) @ 25°C | 100A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 6V, 10V |
| Rds On (Max) @ Id, Vgs | 3.75mOhm @ 100A, 10V |
| Vgs(th) (Max) @ Id | 3.5V @ 155µA |
| Gate Charge (Qg) (Max) @ Vgs | 117nC @ 10V |
| Vgs (Max) | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 8110pF @ 40V |
| FET Feature | - |
| Power Dissipation (Max) | 214W (Tc) |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Mounting Type | Through Hole |
| Supplier Device Package | PG-TO262-3 |
| Package / Case | TO-262-3 Long Leads, I²Pak, TO-262AA |
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Manufacturer STMicroelectronics Series SuperMESH™ FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 600V Current - Continuous Drain (Id) @ 25°C 4A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 2Ohm @ 2A, 10V Vgs(th) (Max) @ Id 4.5V @ 50µA Gate Charge (Qg) (Max) @ Vgs 26nC @ 10V Vgs (Max) ±30V Input Capacitance (Ciss) (Max) @ Vds 510pF @ 25V FET Feature - Power Dissipation (Max) 70W (Tc) Operating Temperature 150°C (TJ) Mounting Type Through Hole Supplier Device Package TO-220AB Package / Case TO-220-3 |
Manufacturer IXYS Series HiPerFET™ FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 600V Current - Continuous Drain (Id) @ 25°C 24A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 175mOhm @ 12A, 10V Vgs(th) (Max) @ Id 4.5V @ 2.5mA Gate Charge (Qg) (Max) @ Vgs 47nC @ 10V Vgs (Max) ±30V Input Capacitance (Ciss) (Max) @ Vds 1910pF @ 25V FET Feature - Power Dissipation (Max) 400W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Through Hole Supplier Device Package TO-3P Package / Case TO-3P-3, SC-65-3 |
Manufacturer Infineon Technologies Series OptiMOS™ FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 25V Current - Continuous Drain (Id) @ 25°C 50A (Tc) Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V Rds On (Max) @ Id, Vgs 6.2mOhm @ 50A, 10V Vgs(th) (Max) @ Id 2V @ 30µA Gate Charge (Qg) (Max) @ Vgs 19nC @ 5V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 2390pF @ 15V FET Feature - Power Dissipation (Max) 71W (Tc) Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Surface Mount Supplier Device Package PG-TO263-3-2 Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
