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IPI034NE7N3 G

IPI034NE7N3 G

For Reference Only

Part Number IPI034NE7N3 G
PNEDA Part # IPI034NE7N3-G
Description MOSFET N-CH 75V 100A TO262-3
Manufacturer Infineon Technologies
Unit Price Request a Quote
In Stock 5,274
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Nov 30 - Dec 5 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

IPI034NE7N3 G Resources

Brand Infineon Technologies
ECAD Module ECAD
Mfr. Part NumberIPI034NE7N3 G
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single

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IPI034NE7N3 G Specifications

ManufacturerInfineon Technologies
SeriesOptiMOS™
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)75V
Current - Continuous Drain (Id) @ 25°C100A (Tc)
Drive Voltage (Max Rds On, Min Rds On)-
Rds On (Max) @ Id, Vgs3.4mOhm @ 100A, 10V
Vgs(th) (Max) @ Id3.8V @ 155µA
Gate Charge (Qg) (Max) @ Vgs117nC @ 10V
Vgs (Max)-
Input Capacitance (Ciss) (Max) @ Vds8130pF @ 37.5V
FET Feature-
Power Dissipation (Max)214W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackagePG-TO262-3
Package / CaseTO-262-3 Long Leads, I²Pak, TO-262AA

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