IPI020N06NAKSA1
For Reference Only
| Part Number | IPI020N06NAKSA1 |
| PNEDA Part # | IPI020N06NAKSA1 |
| Description | MOSFET N-CH 60V 29A TO262-3 |
| Manufacturer | Infineon Technologies |
| Unit Price | Request a Quote |
| In Stock | 3,546 |
| Warehouses | Shipped from Hong Kong SAR |
| Estimated Delivery | Apr 20 - Apr 25 (Choose Expedited Shipping) |
| Guarantee | Up to 1 year [PNEDA-Warranty]* |
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Free shipping on orders over $100. PNEDA is willing to provide you with better services.
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IPI020N06NAKSA1 Resources
| Brand | Infineon Technologies |
| ECAD Module |
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| Mfr. Part Number | IPI020N06NAKSA1 |
| Category | Semiconductors › Transistors › Transistors - FETs, MOSFETs - Single |
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Logistics Mode
- Delivery time: At the same day (Order deadline is 2pm, HK Time).
- Delivery date: usually 2 to 7 working days.
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Notes
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IPI020N06NAKSA1 Specifications
| Manufacturer | Infineon Technologies |
| Series | OptiMOS™ |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 60V |
| Current - Continuous Drain (Id) @ 25°C | 29A (Ta), 120A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 6V, 10V |
| Rds On (Max) @ Id, Vgs | 2mOhm @ 100A, 10V |
| Vgs(th) (Max) @ Id | 2.8V @ 143µA |
| Gate Charge (Qg) (Max) @ Vgs | 106nC @ 10V |
| Vgs (Max) | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 7800pF @ 30V |
| FET Feature | - |
| Power Dissipation (Max) | 3W (Ta), 214W (Tc) |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Mounting Type | Through Hole |
| Supplier Device Package | PG-TO262-3-1 |
| Package / Case | TO-262-3 Long Leads, I²Pak, TO-262AA |
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Manufacturer ON Semiconductor Series - FET Type P-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 20V Current - Continuous Drain (Id) @ 25°C 1.5A (Ta) Drive Voltage (Max Rds On, Min Rds On) 1.8V, 4.5V Rds On (Max) @ Id, Vgs 241mOhm @ 750mA, 4.5V Vgs(th) (Max) @ Id 1.4V @ 1mA Gate Charge (Qg) (Max) @ Vgs 1.7nC @ 4.5V Vgs (Max) ±10V Input Capacitance (Ciss) (Max) @ Vds 120pF @ 10V FET Feature - Power Dissipation (Max) 1W (Ta) Operating Temperature 150°C (TJ) Mounting Type Surface Mount Supplier Device Package SOT-563/SCH6 Package / Case SOT-563, SOT-666 |
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Manufacturer Infineon Technologies Series HEXFET® FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 30V Current - Continuous Drain (Id) @ 25°C 13.6A (Ta) Drive Voltage (Max Rds On, Min Rds On) 4.5V Rds On (Max) @ Id, Vgs 12.5mOhm @ 10A, 4.5V Vgs(th) (Max) @ Id 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs 14nC @ 5V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 1010pF @ 15V FET Feature - Power Dissipation (Max) 2.5W (Ta) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package 8-SO Package / Case 8-SOIC (0.154", 3.90mm Width) |
