IPG20N06S4L26AATMA1
For Reference Only
| Part Number | IPG20N06S4L26AATMA1 |
| PNEDA Part # | IPG20N06S4L26AATMA1 |
| Description | MOSFET 2N-CH 8TDSON |
| Manufacturer | Infineon Technologies |
| Unit Price | Request a Quote |
| In Stock | 80,388 |
| Warehouses | Shipped from Hong Kong SAR |
| Estimated Delivery | Mar 23 - Mar 28 (Choose Expedited Shipping) |
| Guarantee | Up to 1 year [PNEDA-Warranty]* |
|
Free shipping on orders over $100. PNEDA is willing to provide you with better services.
|
|
|
|
|
IPG20N06S4L26AATMA1 Resources
| Brand | Infineon Technologies |
| ECAD Module |
|
| Mfr. Part Number | IPG20N06S4L26AATMA1 |
| Category | Semiconductors › Transistors › Transistors - FETs, MOSFETs - Arrays |
Payment Method
- Penda is not limited to cash transfers. Checks and bill transfers are also accepted.
- If you need the detailed invoice or tax ID,please email us.
- Some orders may require a minimum amount of $100.00.
- Cheque or cash on delivery, processing may take an additional 3-5 days.
Logistics Mode
- Delivery time: At the same day (Order deadline is 2pm, HK Time).
- Delivery date: usually 2 to 7 working days.
- It is unable to appoint a date of delivery.
- Tracking number will be sent once your order has been shipped.
- It may take up to 24 hours before carriers display the info.
Notes
- Please confirm the specifications of the products when ordering.
- If you have special order instructions,please note it on the ordering pages.
- Registered users can log in to the account to view the order status.
- You can email us to change the order details before shipment.
- Orders cannot be canceled after shipping the packages.
At PNEDA, we strive to be the industry leader by quickly and reliably supplying high-quality electronic components to our clients.
Our approach is built around proving our clients with three key advantages:
Prompt Responsiveness
Our team responds quickly to your requests, and gets to work immediately to find your parts.
Guaranteed Quality
Our quality-control processes guard against counterfeits while ensuring reliability and performance.
Global Access
Our worldwide network of trusted resources allows us to find and deliver the specific parts you need.
Hot search vocabulary
- IPG20N06S4L26AATMA1 Datasheet
- where to find IPG20N06S4L26AATMA1
- Infineon Technologies
- Infineon Technologies IPG20N06S4L26AATMA1
- IPG20N06S4L26AATMA1 PDF Datasheet
- IPG20N06S4L26AATMA1 Stock
- IPG20N06S4L26AATMA1 Pinout
- Datasheet IPG20N06S4L26AATMA1
- IPG20N06S4L26AATMA1 Supplier
- Infineon Technologies Distributor
- IPG20N06S4L26AATMA1 Price
- IPG20N06S4L26AATMA1 Distributor
IPG20N06S4L26AATMA1 Specifications
| Manufacturer | Infineon Technologies |
| Series | Automotive, AEC-Q101, OptiMOS™ |
| FET Type | 2 N-Channel (Dual) |
| FET Feature | Logic Level Gate |
| Drain to Source Voltage (Vdss) | 60V |
| Current - Continuous Drain (Id) @ 25°C | 20A |
| Rds On (Max) @ Id, Vgs | 26mOhm @ 17A, 10V |
| Vgs(th) (Max) @ Id | 2.2V @ 10µA |
| Gate Charge (Qg) (Max) @ Vgs | 20nC @ 10V |
| Input Capacitance (Ciss) (Max) @ Vds | 1430pF @ 25V |
| Power - Max | 33W |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Mounting Type | Surface Mount, Wettable Flank |
| Package / Case | 8-PowerVDFN |
| Supplier Device Package | PG-TDSON-8-10 |
The Products You May Be Interested In
|
Manufacturer Advanced Linear Devices Inc. Series EPAD® FET Type 4 N-Channel, Matched Pair FET Feature Depletion Mode Drain to Source Voltage (Vdss) 10.6V Current - Continuous Drain (Id) @ 25°C 12mA, 3mA Rds On (Max) @ Id, Vgs 540Ohm @ 0V Vgs(th) (Max) @ Id 3.45V @ 1µA Gate Charge (Qg) (Max) @ Vgs - Input Capacitance (Ciss) (Max) @ Vds 2.5pF @ 5V Power - Max 500mW Operating Temperature 0°C ~ 70°C (TJ) Mounting Type Through Hole Package / Case 16-DIP (0.300", 7.62mm) Supplier Device Package 16-PDIP |
Manufacturer ON Semiconductor Series PowerTrench® FET Type 2 N-Channel (Dual) Common Source FET Feature Standard Drain to Source Voltage (Vdss) 30V Current - Continuous Drain (Id) @ 25°C 28A (Ta), 95A (Tc) Rds On (Max) @ Id, Vgs 2.12mOhm @ 28A, 10V Vgs(th) (Max) @ Id 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs 90nC @ 10V Input Capacitance (Ciss) (Max) @ Vds 5035pF @ 15V Power - Max 2.1W (Ta), 29W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Package / Case 8-PowerWDFN Supplier Device Package 8-PQFN (3.3x5) |
Manufacturer Sanken Series - FET Type 3 N and 3 P-Channel (3-Phase Bridge) FET Feature Standard Drain to Source Voltage (Vdss) 500V Current - Continuous Drain (Id) @ 25°C 2.5A Rds On (Max) @ Id, Vgs - Vgs(th) (Max) @ Id - Gate Charge (Qg) (Max) @ Vgs - Input Capacitance (Ciss) (Max) @ Vds - Power - Max - Operating Temperature - Mounting Type Through Hole Package / Case 12-SIP Supplier Device Package 12-SIP |
Manufacturer ON Semiconductor Series - FET Type N and P-Channel FET Feature Standard Drain to Source Voltage (Vdss) 8V Current - Continuous Drain (Id) @ 25°C 2.5A Rds On (Max) @ Id, Vgs 50mOhm @ 4A, 4.5V Vgs(th) (Max) @ Id 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs - Input Capacitance (Ciss) (Max) @ Vds - Power - Max 520mW Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Package / Case 6-WDFN Exposed Pad Supplier Device Package 6-WDFN (2x2) |
Manufacturer Nexperia USA Inc. Series - FET Type N and P-Channel Complementary FET Feature Standard Drain to Source Voltage (Vdss) 30V Current - Continuous Drain (Id) @ 25°C 590mA (Ta), 410mA (Ta) Rds On (Max) @ Id, Vgs 670mOhm @ 590mA, 4.5V, 1.4Ohm @ 410mA, 4.5V Vgs(th) (Max) @ Id 950mV @ 250µA Gate Charge (Qg) (Max) @ Vgs 1.05nC @ 4.5V, 1.2nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds 30.3pF @ 15V, 43.2pF @ 15V Power - Max 285mW (Ta) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Package / Case 6-XFDFN Exposed Pad Supplier Device Package DFN1010B-6 |
