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IPG20N06S3L-35

IPG20N06S3L-35

For Reference Only

Part Number IPG20N06S3L-35
PNEDA Part # IPG20N06S3L-35
Description MOSFET 2N-CH 55V 20A TDSON-8
Manufacturer Infineon Technologies
Unit Price Request a Quote
In Stock 5,814
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Mar 17 - Mar 22 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

IPG20N06S3L-35 Resources

Brand Infineon Technologies
ECAD Module ECAD
Mfr. Part NumberIPG20N06S3L-35
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Arrays
Datasheet
IPG20N06S3L-35, IPG20N06S3L-35 Datasheet (Total Pages: 9, Size: 162.39 KB)
PDFIPG20N06S3L-35 Datasheet Cover
IPG20N06S3L-35 Datasheet Page 2 IPG20N06S3L-35 Datasheet Page 3 IPG20N06S3L-35 Datasheet Page 4 IPG20N06S3L-35 Datasheet Page 5 IPG20N06S3L-35 Datasheet Page 6 IPG20N06S3L-35 Datasheet Page 7 IPG20N06S3L-35 Datasheet Page 8 IPG20N06S3L-35 Datasheet Page 9

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IPG20N06S3L-35 Specifications

ManufacturerInfineon Technologies
SeriesOptiMOS™
FET Type2 N-Channel (Dual)
FET FeatureLogic Level Gate
Drain to Source Voltage (Vdss)55V
Current - Continuous Drain (Id) @ 25°C20A
Rds On (Max) @ Id, Vgs35mOhm @ 11A, 10V
Vgs(th) (Max) @ Id2.2V @ 15µA
Gate Charge (Qg) (Max) @ Vgs23nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds1730pF @ 25V
Power - Max30W
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeSurface Mount
Package / Case8-PowerVDFN
Supplier Device PackagePG-TDSON-8-4

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