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IPDD60R190G7XTMA1

IPDD60R190G7XTMA1

For Reference Only

Part Number IPDD60R190G7XTMA1
PNEDA Part # IPDD60R190G7XTMA1
Description MOSFET NCH 650V 36A PG-HDSOP-10
Manufacturer Infineon Technologies
Unit Price Request a Quote
In Stock 6,426
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Nov 25 - Nov 30 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

IPDD60R190G7XTMA1 Resources

Brand Infineon Technologies
ECAD Module ECAD
Mfr. Part NumberIPDD60R190G7XTMA1
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single

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IPDD60R190G7XTMA1 Specifications

ManufacturerInfineon Technologies
SeriesCoolMOS™ G7
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)600V
Current - Continuous Drain (Id) @ 25°C13A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs190mOhm @ 4.2A, 10V
Vgs(th) (Max) @ Id4V @ 210µA
Gate Charge (Qg) (Max) @ Vgs18nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds718pF @ 400V
FET Feature-
Power Dissipation (Max)76W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackagePG-HDSOP-10-1
Package / Case10-PowerSOP Module

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