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IPD90R1K2C3ATMA1

IPD90R1K2C3ATMA1

For Reference Only

Part Number IPD90R1K2C3ATMA1
PNEDA Part # IPD90R1K2C3ATMA1
Description MOSFET N-CH 900V 5.1A TO-252
Manufacturer Infineon Technologies
Unit Price Request a Quote
In Stock 86,472
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Mar 18 - Mar 23 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

IPD90R1K2C3ATMA1 Resources

Brand Infineon Technologies
ECAD Module ECAD
Mfr. Part NumberIPD90R1K2C3ATMA1
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
IPD90R1K2C3ATMA1, IPD90R1K2C3ATMA1 Datasheet (Total Pages: 10, Size: 383.97 KB)
PDFIPD90R1K2C3BTMA1 Datasheet Cover
IPD90R1K2C3BTMA1 Datasheet Page 2 IPD90R1K2C3BTMA1 Datasheet Page 3 IPD90R1K2C3BTMA1 Datasheet Page 4 IPD90R1K2C3BTMA1 Datasheet Page 5 IPD90R1K2C3BTMA1 Datasheet Page 6 IPD90R1K2C3BTMA1 Datasheet Page 7 IPD90R1K2C3BTMA1 Datasheet Page 8 IPD90R1K2C3BTMA1 Datasheet Page 9 IPD90R1K2C3BTMA1 Datasheet Page 10

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IPD90R1K2C3ATMA1 Specifications

ManufacturerInfineon Technologies
SeriesCoolMOS™
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)900V
Current - Continuous Drain (Id) @ 25°C5.1A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs1.2Ohm @ 2.8A, 10V
Vgs(th) (Max) @ Id3.5V @ 310µA
Gate Charge (Qg) (Max) @ Vgs28nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds710pF @ 100V
FET Feature-
Power Dissipation (Max)83W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackagePG-TO252-3
Package / CaseTO-252-3, DPak (2 Leads + Tab), SC-63

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