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IPD80R1K4CEBTMA1

IPD80R1K4CEBTMA1

For Reference Only

Part Number IPD80R1K4CEBTMA1
PNEDA Part # IPD80R1K4CEBTMA1
Description MOSFET N-CH 800V 3.9A TO252-3
Manufacturer Infineon Technologies
Unit Price Request a Quote
In Stock 5,202
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Mar 18 - Mar 23 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

IPD80R1K4CEBTMA1 Resources

Brand Infineon Technologies
ECAD Module ECAD
Mfr. Part NumberIPD80R1K4CEBTMA1
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single

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IPD80R1K4CEBTMA1 Specifications

ManufacturerInfineon Technologies
SeriesCoolMOS™
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)800V
Current - Continuous Drain (Id) @ 25°C3.9A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs1.4Ohm @ 2.3A, 10V
Vgs(th) (Max) @ Id3.9V @ 240µA
Gate Charge (Qg) (Max) @ Vgs23nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds570pF @ 100V
FET Feature-
Power Dissipation (Max)63W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageTO-252-3
Package / CaseTO-252-3, DPak (2 Leads + Tab), SC-63

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