IPD80R1K2P7ATMA1
For Reference Only
| Part Number | IPD80R1K2P7ATMA1 |
| PNEDA Part # | IPD80R1K2P7ATMA1 |
| Description | MOSFET N-CH 800V 4.5A TO252-3 |
| Manufacturer | Infineon Technologies |
| Unit Price | Request a Quote |
| In Stock | 6,696 |
| Warehouses | Shipped from Hong Kong SAR |
| Estimated Delivery | Mar 18 - Mar 23 (Choose Expedited Shipping) |
| Guarantee | Up to 1 year [PNEDA-Warranty]* |
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Free shipping on orders over $100. PNEDA is willing to provide you with better services.
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IPD80R1K2P7ATMA1 Resources
| Brand | Infineon Technologies |
| ECAD Module |
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| Mfr. Part Number | IPD80R1K2P7ATMA1 |
| Category | Semiconductors › Transistors › Transistors - FETs, MOSFETs - Single |
| Datasheet |
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IPD80R1K2P7ATMA1 Specifications
| Manufacturer | Infineon Technologies |
| Series | CoolMOS™ P7 |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 800V |
| Current - Continuous Drain (Id) @ 25°C | 4.5A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Rds On (Max) @ Id, Vgs | 1.2Ohm @ 1.7A, 10V |
| Vgs(th) (Max) @ Id | 3.5V @ 80µA |
| Gate Charge (Qg) (Max) @ Vgs | 11nC @ 10V |
| Vgs (Max) | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 300pF @ 500V |
| FET Feature | - |
| Power Dissipation (Max) | 37W (Tc) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | PG-TO252-3 |
| Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Manufacturer Rohm Semiconductor Series Automotive, AEC-Q101 FET Type N-Channel Technology SiCFET (Silicon Carbide) Drain to Source Voltage (Vdss) 650V Current - Continuous Drain (Id) @ 25°C 93A (Tc) Drive Voltage (Max Rds On, Min Rds On) 18V Rds On (Max) @ Id, Vgs 28.6mOhm @ 36A, 18V Vgs(th) (Max) @ Id 5.6V @ 18.2mA Gate Charge (Qg) (Max) @ Vgs 133nC @ 18V Vgs (Max) +22V, -4V Input Capacitance (Ciss) (Max) @ Vds 2208pF @ 500V FET Feature - Power Dissipation (Max) 339W Operating Temperature 175°C (TJ) Mounting Type Through Hole Supplier Device Package TO-247N Package / Case TO-247-3 |
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Manufacturer Infineon Technologies Series HEXFET® FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 75V Current - Continuous Drain (Id) @ 25°C 106A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 7mOhm @ 82A, 10V Vgs(th) (Max) @ Id 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs 220nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 5310pF @ 25V FET Feature - Power Dissipation (Max) 200W (Tc) Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Surface Mount Supplier Device Package D2PAK Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
