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IPD80N06S3-09

IPD80N06S3-09

For Reference Only

Part Number IPD80N06S3-09
PNEDA Part # IPD80N06S3-09
Description MOSFET N-CH 55V 80A TO252-3
Manufacturer Infineon Technologies
Unit Price Request a Quote
In Stock 2,052
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Nov 24 - Nov 29 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

IPD80N06S3-09 Resources

Brand Infineon Technologies
ECAD Module ECAD
Mfr. Part NumberIPD80N06S3-09
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
IPD80N06S3-09, IPD80N06S3-09 Datasheet (Total Pages: 9, Size: 182.69 KB)
PDFIPD80N06S3-09 Datasheet Cover
IPD80N06S3-09 Datasheet Page 2 IPD80N06S3-09 Datasheet Page 3 IPD80N06S3-09 Datasheet Page 4 IPD80N06S3-09 Datasheet Page 5 IPD80N06S3-09 Datasheet Page 6 IPD80N06S3-09 Datasheet Page 7 IPD80N06S3-09 Datasheet Page 8 IPD80N06S3-09 Datasheet Page 9

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IPD80N06S3-09 Specifications

ManufacturerInfineon Technologies
SeriesOptiMOS™
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)55V
Current - Continuous Drain (Id) @ 25°C80A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs8.4mOhm @ 40A, 10V
Vgs(th) (Max) @ Id4V @ 55µA
Gate Charge (Qg) (Max) @ Vgs88nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds6100pF @ 25V
FET Feature-
Power Dissipation (Max)107W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackagePG-TO252-3
Package / CaseTO-252-3, DPak (2 Leads + Tab), SC-63

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