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IPD65R420CFDBTMA1

IPD65R420CFDBTMA1

For Reference Only

Part Number IPD65R420CFDBTMA1
PNEDA Part # IPD65R420CFDBTMA1
Description MOSFET N-CH 650V 8.7A TO252
Manufacturer Infineon Technologies
Unit Price Request a Quote
In Stock 6,678
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Mar 20 - Mar 25 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

IPD65R420CFDBTMA1 Resources

Brand Infineon Technologies
ECAD Module ECAD
Mfr. Part NumberIPD65R420CFDBTMA1
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
IPD65R420CFDBTMA1, IPD65R420CFDBTMA1 Datasheet (Total Pages: 21, Size: 4,578.91 KB)
PDFIPB65R420CFDATMA1 Datasheet Cover
IPB65R420CFDATMA1 Datasheet Page 2 IPB65R420CFDATMA1 Datasheet Page 3 IPB65R420CFDATMA1 Datasheet Page 4 IPB65R420CFDATMA1 Datasheet Page 5 IPB65R420CFDATMA1 Datasheet Page 6 IPB65R420CFDATMA1 Datasheet Page 7 IPB65R420CFDATMA1 Datasheet Page 8 IPB65R420CFDATMA1 Datasheet Page 9 IPB65R420CFDATMA1 Datasheet Page 10 IPB65R420CFDATMA1 Datasheet Page 11

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IPD65R420CFDBTMA1 Specifications

ManufacturerInfineon Technologies
SeriesCoolMOS™
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)650V
Current - Continuous Drain (Id) @ 25°C8.7A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs420mOhm @ 3.4A, 10V
Vgs(th) (Max) @ Id4.5V @ 340µA
Gate Charge (Qg) (Max) @ Vgs32nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds870pF @ 100V
FET Feature-
Power Dissipation (Max)83.3W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackagePG-TO252-3
Package / CaseTO-252-3, DPak (2 Leads + Tab), SC-63

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