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IPD60R3K4CEAUMA1

IPD60R3K4CEAUMA1

For Reference Only

Part Number IPD60R3K4CEAUMA1
PNEDA Part # IPD60R3K4CEAUMA1
Description MOSFET N-CH 650V 2.6A TO252-3
Manufacturer Infineon Technologies
Unit Price Request a Quote
In Stock 8,190
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Mar 20 - Mar 25 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

IPD60R3K4CEAUMA1 Resources

Brand Infineon Technologies
ECAD Module ECAD
Mfr. Part NumberIPD60R3K4CEAUMA1
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single

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IPD60R3K4CEAUMA1 Specifications

ManufacturerInfineon Technologies
Series-
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)650V
Current - Continuous Drain (Id) @ 25°C2.6A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs3.4Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id3.5V @ 40µA
Gate Charge (Qg) (Max) @ Vgs4.6nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds93pF @ 100V
FET Feature-
Power Dissipation (Max)29W (Tc)
Operating Temperature-40°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackagePG-TO252-3
Package / CaseTO-252-3, DPak (2 Leads + Tab), SC-63

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