Certifications

iso9001
iso14001
icas
Delivery
security
warranty
roiginal
RoHS
UL
Millions of Electronic Parts In Stock. Price & Lead Time Quotes within 24 Hours.

IPD60R2K0C6BTMA1

IPD60R2K0C6BTMA1

For Reference Only

Part Number IPD60R2K0C6BTMA1
PNEDA Part # IPD60R2K0C6BTMA1
Description MOSFET N-CH 600V 2.4A TO252-3
Manufacturer Infineon Technologies
Unit Price Request a Quote
In Stock 5,076
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Mar 20 - Mar 25 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

IPD60R2K0C6BTMA1 Resources

Brand Infineon Technologies
ECAD Module ECAD
Mfr. Part NumberIPD60R2K0C6BTMA1
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
IPD60R2K0C6BTMA1, IPD60R2K0C6BTMA1 Datasheet (Total Pages: 14, Size: 938.66 KB)
PDFIPD60R2K0C6BTMA1 Datasheet Cover
IPD60R2K0C6BTMA1 Datasheet Page 2 IPD60R2K0C6BTMA1 Datasheet Page 3 IPD60R2K0C6BTMA1 Datasheet Page 4 IPD60R2K0C6BTMA1 Datasheet Page 5 IPD60R2K0C6BTMA1 Datasheet Page 6 IPD60R2K0C6BTMA1 Datasheet Page 7 IPD60R2K0C6BTMA1 Datasheet Page 8 IPD60R2K0C6BTMA1 Datasheet Page 9 IPD60R2K0C6BTMA1 Datasheet Page 10 IPD60R2K0C6BTMA1 Datasheet Page 11

Payment Method

TT Unionpay paypal paypalwtcreditcard alipay wu
  • Penda is not limited to cash transfers. Checks and bill transfers are also accepted.
  • If you need the detailed invoice or tax ID,please email us.
  • Some orders may require a minimum amount of $100.00.
  • Cheque or cash on delivery, processing may take an additional 3-5 days.

Logistics Mode

TNT UPS Fedex EMS DHL
  • Delivery time: At the same day (Order deadline is 2pm, HK Time).
  • Delivery date: usually 2 to 7 working days.
  • It is unable to appoint a date of delivery.
  • Tracking number will be sent once your order has been shipped.
  • It may take up to 24 hours before carriers display the info.

Notes

  • Please confirm the specifications of the products when ordering.
  • If you have special order instructions,please note it on the ordering pages.
  • Registered users can log in to the account to view the order status.
  • You can email us to change the order details before shipment.
  • Orders cannot be canceled after shipping the packages.

At PNEDA, we strive to be the industry leader by quickly and reliably supplying high-quality electronic components to our clients.

Our approach is built around proving our clients with three key advantages:

  • Prompt Responsiveness

    Our team responds quickly to your requests, and gets to work immediately to find your parts.

  • Guaranteed Quality

    Our quality-control processes guard against counterfeits while ensuring reliability and performance.

  • Global Access

    Our worldwide network of trusted resources allows us to find and deliver the specific parts you need.

Hot search vocabulary

  • IPD60R2K0C6BTMA1 Datasheet
  • where to find IPD60R2K0C6BTMA1
  • Infineon Technologies

  • Infineon Technologies IPD60R2K0C6BTMA1
  • IPD60R2K0C6BTMA1 PDF Datasheet
  • IPD60R2K0C6BTMA1 Stock

  • IPD60R2K0C6BTMA1 Pinout
  • Datasheet IPD60R2K0C6BTMA1
  • IPD60R2K0C6BTMA1 Supplier

  • Infineon Technologies Distributor
  • IPD60R2K0C6BTMA1 Price
  • IPD60R2K0C6BTMA1 Distributor

IPD60R2K0C6BTMA1 Specifications

ManufacturerInfineon Technologies
SeriesCoolMOS™
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)600V
Current - Continuous Drain (Id) @ 25°C2.4A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs2Ohm @ 760mA, 10V
Vgs(th) (Max) @ Id3.5V @ 60µA
Gate Charge (Qg) (Max) @ Vgs6.7nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds140pF @ 100V
FET Feature-
Power Dissipation (Max)22.3W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackagePG-TO252-3
Package / CaseTO-252-3, DPak (2 Leads + Tab), SC-63

The Products You May Be Interested In

FQP2NA90

ON Semiconductor

Manufacturer

ON Semiconductor

Series

QFET®

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

900V

Current - Continuous Drain (Id) @ 25°C

2.8A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

5.8Ohm @ 1.4A, 10V

Vgs(th) (Max) @ Id

5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

20nC @ 10V

Vgs (Max)

±30V

Input Capacitance (Ciss) (Max) @ Vds

680pF @ 25V

FET Feature

-

Power Dissipation (Max)

107W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-220-3

Package / Case

TO-220-3

Manufacturer

IXYS

Series

HiPerFET™, Polar3™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

600V

Current - Continuous Drain (Id) @ 25°C

50A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

145mOhm @ 500mA, 10V

Vgs(th) (Max) @ Id

5V @ 4mA

Gate Charge (Qg) (Max) @ Vgs

94nC @ 10V

Vgs (Max)

±30V

Input Capacitance (Ciss) (Max) @ Vds

6300pF @ 25V

FET Feature

-

Power Dissipation (Max)

1040W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-3P

Package / Case

TO-3P-3, SC-65-3

AON7296

Alpha & Omega Semiconductor

Manufacturer

Alpha & Omega Semiconductor Inc.

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

100V

Current - Continuous Drain (Id) @ 25°C

5A (Ta), 12.5A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

66mOhm @ 5A, 10V

Vgs(th) (Max) @ Id

2.8V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

12nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

415pF @ 50V

FET Feature

-

Power Dissipation (Max)

3.1W (Ta), 20.8W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

8-DFN (3x3)

Package / Case

8-PowerVDFN

DMP2035UVT-7

Diodes Incorporated

Manufacturer

Diodes Incorporated

Series

-

FET Type

P-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

20V

Current - Continuous Drain (Id) @ 25°C

6A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

1.8V, 4.5V

Rds On (Max) @ Id, Vgs

35mOhm @ 4A, 4.5V

Vgs(th) (Max) @ Id

1.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

23.1nC @ 4.5V

Vgs (Max)

±12V

Input Capacitance (Ciss) (Max) @ Vds

2400pF @ 10V

FET Feature

-

Power Dissipation (Max)

1.2W (Ta)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

TSOT-26

Package / Case

SOT-23-6 Thin, TSOT-23-6

IXTM1712

IXYS

Manufacturer

IXYS

Series

-

FET Type

-

Technology

-

Drain to Source Voltage (Vdss)

-

Current - Continuous Drain (Id) @ 25°C

-

Drive Voltage (Max Rds On, Min Rds On)

-

Rds On (Max) @ Id, Vgs

-

Vgs(th) (Max) @ Id

-

Gate Charge (Qg) (Max) @ Vgs

-

Vgs (Max)

-

Input Capacitance (Ciss) (Max) @ Vds

-

FET Feature

-

Power Dissipation (Max)

-

Operating Temperature

-

Mounting Type

-

Supplier Device Package

-

Package / Case

-

Recently Sold

74HC573D

74HC573D

Toshiba Semiconductor and Storage

IC LATCH OCTAL D 3ST 20SOIC

LC4256V-75T176C

LC4256V-75T176C

Lattice Semiconductor Corporation

IC CPLD 256MC 7.5NS 176TQFP

2N6433

2N6433

Central Semiconductor Corp

THROUGH-HOLE TRANSISTOR-SMALL SI

BAV70LT1G

BAV70LT1G

ON Semiconductor

DIODE ARRAY GP 100V 200MA SOT23

AS5145B-HSSM

AS5145B-HSSM

ams

ROTARY ENCODER MAGNETIC 1024PPR

DS1305EN

DS1305EN

Maxim Integrated

IC RTC CLK/CALENDAR SPI 20-TSSOP

SI7114DN-T1-E3

SI7114DN-T1-E3

Vishay Siliconix

MOSFET N-CH 30V 11.7A 1212-8

LTM8045IY#PBF

LTM8045IY#PBF

Linear Technology/Analog Devices

DC DC CONVERTER +/-2.5 +/-15V

TLMG3100-GS08

TLMG3100-GS08

Vishay Semiconductor Opto Division

LED GREEN CLEAR 2PLCC SMD

TR2/TCP1.25-R

TR2/TCP1.25-R

Eaton - Electronics Division

FUSE BRD MNT 1.25A 250VAC 2SMD

NC7WZ17P6X

NC7WZ17P6X

ON Semiconductor

IC BUF NON-INVERT 5.5V SC70-6

LT1764EQ#TRPBF

LT1764EQ#TRPBF

Linear Technology/Analog Devices

IC REG LINEAR POS ADJ 3A 5DDPAK