IPD60N10S4L12ATMA1
For Reference Only
| Part Number | IPD60N10S4L12ATMA1 |
| PNEDA Part # | IPD60N10S4L12ATMA1 |
| Description | MOSFET N-CH TO252-3 |
| Manufacturer | Infineon Technologies |
| Unit Price | Request a Quote |
| In Stock | 314,094 |
| Warehouses | Shipped from Hong Kong SAR |
| Estimated Delivery | Apr 4 - Apr 9 (Choose Expedited Shipping) |
| Guarantee | Up to 1 year [PNEDA-Warranty]* |
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Free shipping on orders over $100. PNEDA is willing to provide you with better services.
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IPD60N10S4L12ATMA1 Resources
| Brand | Infineon Technologies |
| ECAD Module |
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| Mfr. Part Number | IPD60N10S4L12ATMA1 |
| Category | Semiconductors › Transistors › Transistors - FETs, MOSFETs - Single |
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IPD60N10S4L12ATMA1 Specifications
| Manufacturer | Infineon Technologies |
| Series | Automotive, AEC-Q101, HEXFET® |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 100V |
| Current - Continuous Drain (Id) @ 25°C | 60A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Rds On (Max) @ Id, Vgs | 12mOhm @ 60A, 10V |
| Vgs(th) (Max) @ Id | 2.1V @ 46µA |
| Gate Charge (Qg) (Max) @ Vgs | 49nC @ 10V |
| Vgs (Max) | ±16V |
| Input Capacitance (Ciss) (Max) @ Vds | 3170pF @ 25V |
| FET Feature | - |
| Power Dissipation (Max) | 94W (Tc) |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | PG-TO252-3-313 |
| Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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