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IPD50R650CEATMA1

IPD50R650CEATMA1

For Reference Only

Part Number IPD50R650CEATMA1
PNEDA Part # IPD50R650CEATMA1
Description MOSFET N CH 500V 6.1A PG-TO252
Manufacturer Infineon Technologies
Unit Price Request a Quote
In Stock 8,298
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Mar 20 - Mar 25 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

IPD50R650CEATMA1 Resources

Brand Infineon Technologies
ECAD Module ECAD
Mfr. Part NumberIPD50R650CEATMA1
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single

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IPD50R650CEATMA1 Specifications

ManufacturerInfineon Technologies
SeriesCoolMOS™ CE
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)500V
Current - Continuous Drain (Id) @ 25°C6.1A (Tc)
Drive Voltage (Max Rds On, Min Rds On)13V
Rds On (Max) @ Id, Vgs650mOhm @ 1.8A, 13V
Vgs(th) (Max) @ Id3.5V @ 150µA
Gate Charge (Qg) (Max) @ Vgs15nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds342pF @ 100V
FET Feature-
Power Dissipation (Max)69W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackagePG-TO252-3
Package / CaseTO-252-3, DPak (2 Leads + Tab), SC-63

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