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IPD35N12S3L24ATMA1

IPD35N12S3L24ATMA1

For Reference Only

Part Number IPD35N12S3L24ATMA1
PNEDA Part # IPD35N12S3L24ATMA1
Description MOSFET N-CH 120V 35A TO252-3
Manufacturer Infineon Technologies
Unit Price Request a Quote
In Stock 65,214
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Nov 24 - Nov 29 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

IPD35N12S3L24ATMA1 Resources

Brand Infineon Technologies
ECAD Module ECAD
Mfr. Part NumberIPD35N12S3L24ATMA1
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single

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IPD35N12S3L24ATMA1 Specifications

ManufacturerInfineon Technologies
SeriesOptiMOS™
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)120V
Current - Continuous Drain (Id) @ 25°C35A (Tc)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Rds On (Max) @ Id, Vgs24mOhm @ 35A, 10V
Vgs(th) (Max) @ Id2.4V @ 39µA
Gate Charge (Qg) (Max) @ Vgs39nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds2700pF @ 25V
FET Feature-
Power Dissipation (Max)71W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackagePG-TO252-3
Package / CaseTO-252-3, DPak (2 Leads + Tab), SC-63

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