IPD30N08S2L21ATMA1
For Reference Only
| Part Number | IPD30N08S2L21ATMA1 |
| PNEDA Part # | IPD30N08S2L21ATMA1 |
| Description | MOSFET N-CH 75V 30A TO252-3 |
| Manufacturer | Infineon Technologies |
| Unit Price | Request a Quote |
| In Stock | 92,670 |
| Warehouses | Shipped from Hong Kong SAR |
| Estimated Delivery | Nov 24 - Nov 29 (Choose Expedited Shipping) |
| Guarantee | Up to 1 year [PNEDA-Warranty]* |
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Free shipping on orders over $100. PNEDA is willing to provide you with better services.
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IPD30N08S2L21ATMA1 Resources
| Brand | Infineon Technologies |
| ECAD Module |
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| Mfr. Part Number | IPD30N08S2L21ATMA1 |
| Category | Semiconductors › Transistors › Transistors - FETs, MOSFETs - Single |
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IPD30N08S2L21ATMA1 Specifications
| Manufacturer | Infineon Technologies |
| Series | OptiMOS™ |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 75V |
| Current - Continuous Drain (Id) @ 25°C | 30A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Rds On (Max) @ Id, Vgs | 20.5mOhm @ 25A, 10V |
| Vgs(th) (Max) @ Id | 2V @ 80µA |
| Gate Charge (Qg) (Max) @ Vgs | 72nC @ 10V |
| Vgs (Max) | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 1650pF @ 25V |
| FET Feature | - |
| Power Dissipation (Max) | 136W (Tc) |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | PG-TO252-3 |
| Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Manufacturer Toshiba Semiconductor and Storage Series DTMOSIV FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 600V Current - Continuous Drain (Id) @ 25°C 5.4A (Ta) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 900mOhm @ 2.7A, 10V Vgs(th) (Max) @ Id 3.7V @ 270µA Gate Charge (Qg) (Max) @ Vgs 10.5nC @ 10V Vgs (Max) ±30V Input Capacitance (Ciss) (Max) @ Vds 380pF @ 300V FET Feature Super Junction Power Dissipation (Max) 60W (Tc) Operating Temperature 150°C (TJ) Mounting Type Through Hole Supplier Device Package I-PAK Package / Case TO-251-3 Stub Leads, IPak |
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Manufacturer Infineon Technologies Series HEXFET® FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 100V Current - Continuous Drain (Id) @ 25°C 33A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 44mOhm @ 16A, 10V Vgs(th) (Max) @ Id 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs 71nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 1960pF @ 25V FET Feature - Power Dissipation (Max) 130W (Tc) Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Through Hole Supplier Device Package TO-262 Package / Case TO-262-3 Long Leads, I²Pak, TO-262AA |
