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IPD230N06NGBTMA1

IPD230N06NGBTMA1

For Reference Only

Part Number IPD230N06NGBTMA1
PNEDA Part # IPD230N06NGBTMA1
Description MOSFET N-CH 60V 30A DPAK
Manufacturer Infineon Technologies
Unit Price Request a Quote
In Stock 6,228
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Mar 20 - Mar 25 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

IPD230N06NGBTMA1 Resources

Brand Infineon Technologies
ECAD Module ECAD
Mfr. Part NumberIPD230N06NGBTMA1
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
IPD230N06NGBTMA1, IPD230N06NGBTMA1 Datasheet (Total Pages: 9, Size: 1,008.61 KB)
PDFIPD230N06NGBTMA1 Datasheet Cover
IPD230N06NGBTMA1 Datasheet Page 2 IPD230N06NGBTMA1 Datasheet Page 3 IPD230N06NGBTMA1 Datasheet Page 4 IPD230N06NGBTMA1 Datasheet Page 5 IPD230N06NGBTMA1 Datasheet Page 6 IPD230N06NGBTMA1 Datasheet Page 7 IPD230N06NGBTMA1 Datasheet Page 8 IPD230N06NGBTMA1 Datasheet Page 9

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IPD230N06NGBTMA1 Specifications

ManufacturerInfineon Technologies
SeriesOptiMOS™
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)60V
Current - Continuous Drain (Id) @ 25°C30A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs23mOhm @ 30A, 10V
Vgs(th) (Max) @ Id4V @ 50µA
Gate Charge (Qg) (Max) @ Vgs31nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds1100pF @ 30V
FET Feature-
Power Dissipation (Max)100W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackagePG-TO252-3
Package / CaseTO-252-3, DPak (2 Leads + Tab), SC-63

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