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IPD180N10N3GATMA1

IPD180N10N3GATMA1

For Reference Only

Part Number IPD180N10N3GATMA1
PNEDA Part # IPD180N10N3GATMA1
Description MV POWER MOS
Manufacturer Infineon Technologies
Unit Price Request a Quote
In Stock 4,806
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Mar 21 - Mar 26 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

IPD180N10N3GATMA1 Resources

Brand Infineon Technologies
ECAD Module ECAD
Mfr. Part NumberIPD180N10N3GATMA1
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
IPD180N10N3GATMA1, IPD180N10N3GATMA1 Datasheet (Total Pages: 9, Size: 506.07 KB)
PDFIPD180N10N3GBTMA1 Datasheet Cover
IPD180N10N3GBTMA1 Datasheet Page 2 IPD180N10N3GBTMA1 Datasheet Page 3 IPD180N10N3GBTMA1 Datasheet Page 4 IPD180N10N3GBTMA1 Datasheet Page 5 IPD180N10N3GBTMA1 Datasheet Page 6 IPD180N10N3GBTMA1 Datasheet Page 7 IPD180N10N3GBTMA1 Datasheet Page 8 IPD180N10N3GBTMA1 Datasheet Page 9

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IPD180N10N3GATMA1 Specifications

ManufacturerInfineon Technologies
SeriesOptiMOS™
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)100V
Current - Continuous Drain (Id) @ 25°C43A (Tc)
Drive Voltage (Max Rds On, Min Rds On)6V, 10V
Rds On (Max) @ Id, Vgs18mOhm @ 33A, 10V
Vgs(th) (Max) @ Id3.5V @ 33µA
Gate Charge (Qg) (Max) @ Vgs25nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds1800pF @ 50V
FET Feature-
Power Dissipation (Max)71W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackagePG-TO252-3
Package / CaseTO-252-3, DPak (2 Leads + Tab), SC-63

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