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IPD170N04NGBTMA1

IPD170N04NGBTMA1

For Reference Only

Part Number IPD170N04NGBTMA1
PNEDA Part # IPD170N04NGBTMA1
Description MOSFET N-CH 40V 30A TO252-3
Manufacturer Infineon Technologies
Unit Price Request a Quote
In Stock 4,554
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Feb 1 - Feb 6 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

IPD170N04NGBTMA1 Resources

Brand Infineon Technologies
ECAD Module ECAD
Mfr. Part NumberIPD170N04NGBTMA1
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
IPD170N04NGBTMA1, IPD170N04NGBTMA1 Datasheet (Total Pages: 9, Size: 437.97 KB)
PDFIPD170N04NGBTMA1 Datasheet Cover
IPD170N04NGBTMA1 Datasheet Page 2 IPD170N04NGBTMA1 Datasheet Page 3 IPD170N04NGBTMA1 Datasheet Page 4 IPD170N04NGBTMA1 Datasheet Page 5 IPD170N04NGBTMA1 Datasheet Page 6 IPD170N04NGBTMA1 Datasheet Page 7 IPD170N04NGBTMA1 Datasheet Page 8 IPD170N04NGBTMA1 Datasheet Page 9

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IPD170N04NGBTMA1 Specifications

ManufacturerInfineon Technologies
SeriesOptiMOS™
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)40V
Current - Continuous Drain (Id) @ 25°C30A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs17mOhm @ 30A, 10V
Vgs(th) (Max) @ Id4V @ 10µA
Gate Charge (Qg) (Max) @ Vgs11nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds880pF @ 20V
FET Feature-
Power Dissipation (Max)31W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackagePG-TO252-3
Package / CaseTO-252-3, DPak (2 Leads + Tab), SC-63

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