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IPD06P003NSAUMA1

IPD06P003NSAUMA1

For Reference Only

Part Number IPD06P003NSAUMA1
PNEDA Part # IPD06P003NSAUMA1
Description MOSFET P-CH TO252-3
Manufacturer Infineon Technologies
Unit Price Request a Quote
In Stock 6,912
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Mar 18 - Mar 23 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

IPD06P003NSAUMA1 Resources

Brand Infineon Technologies
ECAD Module ECAD
Mfr. Part NumberIPD06P003NSAUMA1
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single

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IPD06P003NSAUMA1 Specifications

ManufacturerInfineon Technologies
SeriesOptiMOS™
FET TypeP-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)60V
Current - Continuous Drain (Id) @ 25°C22A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs65mOhm @ 22A, 10V
Vgs(th) (Max) @ Id4V @ 1.04mA
Gate Charge (Qg) (Max) @ Vgs39nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds1600pF @ 30V
FET Feature-
Power Dissipation (Max)83W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackagePG-TO252-3-313
Package / CaseTO-252-3, DPak (2 Leads + Tab), SC-63

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