Certifications

iso9001
iso14001
icas
Delivery
security
warranty
roiginal
RoHS
UL
Millions of Electronic Parts In Stock. Price & Lead Time Quotes within 24 Hours.

IPD034N06N3GATMA1

IPD034N06N3GATMA1

For Reference Only

Part Number IPD034N06N3GATMA1
PNEDA Part # IPD034N06N3GATMA1
Description MOSFET N-CH 60V 100A TO252-3
Manufacturer Infineon Technologies
Unit Price Request a Quote
In Stock 3,564
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Mar 21 - Mar 26 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

IPD034N06N3GATMA1 Resources

Brand Infineon Technologies
ECAD Module ECAD
Mfr. Part NumberIPD034N06N3GATMA1
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single

Payment Method

TT Unionpay paypal paypalwtcreditcard alipay wu
  • Penda is not limited to cash transfers. Checks and bill transfers are also accepted.
  • If you need the detailed invoice or tax ID,please email us.
  • Some orders may require a minimum amount of $100.00.
  • Cheque or cash on delivery, processing may take an additional 3-5 days.

Logistics Mode

TNT UPS Fedex EMS DHL
  • Delivery time: At the same day (Order deadline is 2pm, HK Time).
  • Delivery date: usually 2 to 7 working days.
  • It is unable to appoint a date of delivery.
  • Tracking number will be sent once your order has been shipped.
  • It may take up to 24 hours before carriers display the info.

Notes

  • Please confirm the specifications of the products when ordering.
  • If you have special order instructions,please note it on the ordering pages.
  • Registered users can log in to the account to view the order status.
  • You can email us to change the order details before shipment.
  • Orders cannot be canceled after shipping the packages.

At PNEDA, we strive to be the industry leader by quickly and reliably supplying high-quality electronic components to our clients.

Our approach is built around proving our clients with three key advantages:

  • Prompt Responsiveness

    Our team responds quickly to your requests, and gets to work immediately to find your parts.

  • Guaranteed Quality

    Our quality-control processes guard against counterfeits while ensuring reliability and performance.

  • Global Access

    Our worldwide network of trusted resources allows us to find and deliver the specific parts you need.

Hot search vocabulary

  • IPD034N06N3GATMA1 Datasheet
  • where to find IPD034N06N3GATMA1
  • Infineon Technologies

  • Infineon Technologies IPD034N06N3GATMA1
  • IPD034N06N3GATMA1 PDF Datasheet
  • IPD034N06N3GATMA1 Stock

  • IPD034N06N3GATMA1 Pinout
  • Datasheet IPD034N06N3GATMA1
  • IPD034N06N3GATMA1 Supplier

  • Infineon Technologies Distributor
  • IPD034N06N3GATMA1 Price
  • IPD034N06N3GATMA1 Distributor

IPD034N06N3GATMA1 Specifications

ManufacturerInfineon Technologies
SeriesOptiMOS™
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)60V
Current - Continuous Drain (Id) @ 25°C100A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs3.4mOhm @ 100A, 10V
Vgs(th) (Max) @ Id4V @ 93µA
Gate Charge (Qg) (Max) @ Vgs130nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds11000pF @ 30V
FET Feature-
Power Dissipation (Max)167W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackagePG-TO252-3
Package / CaseTO-252-3, DPak (2 Leads + Tab), SC-63

The Products You May Be Interested In

IPP80N03S4L03AKSA1

Infineon Technologies

Manufacturer

Infineon Technologies

Series

OptiMOS™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

30V

Current - Continuous Drain (Id) @ 25°C

80A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

2.7mOhm @ 80A, 10V

Vgs(th) (Max) @ Id

2.2V @ 90µA

Gate Charge (Qg) (Max) @ Vgs

140nC @ 10V

Vgs (Max)

±16V

Input Capacitance (Ciss) (Max) @ Vds

9750pF @ 25V

FET Feature

-

Power Dissipation (Max)

136W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

PG-TO220-3-1

Package / Case

TO-220-3

FDB6690S

ON Semiconductor

Manufacturer

ON Semiconductor

Series

PowerTrench®, SyncFET™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

30V

Current - Continuous Drain (Id) @ 25°C

42A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

15.5mOhm @ 21A, 10V

Vgs(th) (Max) @ Id

3V @ 1mA

Gate Charge (Qg) (Max) @ Vgs

15nC @ 5V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

1238pF @ 15V

FET Feature

-

Power Dissipation (Max)

48W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

TO-263AB

Package / Case

TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

STL115N10F7AG

STMicroelectronics

Manufacturer

STMicroelectronics

Series

Automotive, AEC-Q101, STripFET™ F7

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

100V

Current - Continuous Drain (Id) @ 25°C

107A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

6mOhm @ 53A, 10V

Vgs(th) (Max) @ Id

4.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

72.5nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

5600pF @ 50V

FET Feature

-

Power Dissipation (Max)

136W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

PowerFlat™ (5x6)

Package / Case

8-PowerVDFN

IPB65R045C7ATMA1

Infineon Technologies

Manufacturer

Infineon Technologies

Series

CoolMOS™ C7

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

650V

Current - Continuous Drain (Id) @ 25°C

46A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

45mOhm @ 24.9A, 10V

Vgs(th) (Max) @ Id

4V @ 1.25mA

Gate Charge (Qg) (Max) @ Vgs

93nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

4340pF @ 400V

FET Feature

-

Power Dissipation (Max)

227W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

D²PAK (TO-263AB)

Package / Case

TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

IRFR5305TRPBF

Infineon Technologies

Manufacturer

Infineon Technologies

Series

HEXFET®

FET Type

P-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

55V

Current - Continuous Drain (Id) @ 25°C

31A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

65mOhm @ 16A, 10V

Vgs(th) (Max) @ Id

4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

63nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

1200pF @ 25V

FET Feature

-

Power Dissipation (Max)

110W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

D-Pak

Package / Case

TO-252-3, DPak (2 Leads + Tab), SC-63

Recently Sold

FMG2G400US60

FMG2G400US60

ON Semiconductor

IGBT MOLDING 600V 400A 7PM-IA

M29W800DT70N6E

M29W800DT70N6E

Micron Technology Inc.

IC FLASH 8M PARALLEL 48TSOP

PIC18F6410-I/PT

PIC18F6410-I/PT

Microchip Technology

IC MCU 8BIT 16KB FLASH 64TQFP

ADXRS450BEYZ

ADXRS450BEYZ

Analog Devices

SENS GYRO 300DEG/S DGTL 14CLCC

0452007.MRL

0452007.MRL

Littelfuse

FUSE BRD MNT 7A 72VAC 60VDC 2SMD

NUC2401MNTAG

NUC2401MNTAG

ON Semiconductor

CMC 100MA 2LN 90 OHM SMD

PT61020EL

PT61020EL

Bourns

PULSE XFMR 1CT:1 350UH

ATF-54143-TR1G

ATF-54143-TR1G

Broadcom

FET RF 5V 2GHZ SOT-343

MC9S08LG16CLF

MC9S08LG16CLF

NXP

IC MCU 8BIT 18KB FLASH 48LQFP

ALS70A243DF063

ALS70A243DF063

KEMET

CAP ALUM 24000UF 20% 63V SCREW

MT40A256M16GE-083E IT:B

MT40A256M16GE-083E IT:B

Micron Technology Inc.

IC DRAM 4G PARALLEL 96FBGA

843002AKI-40LFT

843002AKI-40LFT

IDT, Integrated Device Technology

IC SYNTHESIZER LVPECL 32-VFQFPN