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IPD031N03LGATMA1

IPD031N03LGATMA1

For Reference Only

Part Number IPD031N03LGATMA1
PNEDA Part # IPD031N03LGATMA1
Description MOSFET N-CH 30V 90A TO252-3
Manufacturer Infineon Technologies
Unit Price Request a Quote
In Stock 2,862
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Mar 20 - Mar 25 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

IPD031N03LGATMA1 Resources

Brand Infineon Technologies
ECAD Module ECAD
Mfr. Part NumberIPD031N03LGATMA1
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
IPD031N03LGATMA1, IPD031N03LGATMA1 Datasheet (Total Pages: 10, Size: 671.03 KB)
PDFIPS031N03LGAKMA1 Datasheet Cover
IPS031N03LGAKMA1 Datasheet Page 2 IPS031N03LGAKMA1 Datasheet Page 3 IPS031N03LGAKMA1 Datasheet Page 4 IPS031N03LGAKMA1 Datasheet Page 5 IPS031N03LGAKMA1 Datasheet Page 6 IPS031N03LGAKMA1 Datasheet Page 7 IPS031N03LGAKMA1 Datasheet Page 8 IPS031N03LGAKMA1 Datasheet Page 9 IPS031N03LGAKMA1 Datasheet Page 10

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IPD031N03LGATMA1 Specifications

ManufacturerInfineon Technologies
SeriesOptiMOS™
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)30V
Current - Continuous Drain (Id) @ 25°C90A (Tc)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Rds On (Max) @ Id, Vgs3.1mOhm @ 30A, 10V
Vgs(th) (Max) @ Id2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs51nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds5300pF @ 15V
FET Feature-
Power Dissipation (Max)94W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackagePG-TO252-3
Package / CaseTO-252-3, DPak (2 Leads + Tab), SC-63

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