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IPC80N04S403ATMA1

IPC80N04S403ATMA1

For Reference Only

Part Number IPC80N04S403ATMA1
PNEDA Part # IPC80N04S403ATMA1
Description MOSFET N-CH 8TDSON
Manufacturer Infineon Technologies
Unit Price Request a Quote
In Stock 2,430
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Nov 26 - Dec 1 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

IPC80N04S403ATMA1 Resources

Brand Infineon Technologies
ECAD Module ECAD
Mfr. Part NumberIPC80N04S403ATMA1
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
IPC80N04S403ATMA1, IPC80N04S403ATMA1 Datasheet (Total Pages: 9, Size: 196.36 KB)
PDFIPC80N04S403ATMA1 Datasheet Cover
IPC80N04S403ATMA1 Datasheet Page 2 IPC80N04S403ATMA1 Datasheet Page 3 IPC80N04S403ATMA1 Datasheet Page 4 IPC80N04S403ATMA1 Datasheet Page 5 IPC80N04S403ATMA1 Datasheet Page 6 IPC80N04S403ATMA1 Datasheet Page 7 IPC80N04S403ATMA1 Datasheet Page 8 IPC80N04S403ATMA1 Datasheet Page 9

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IPC80N04S403ATMA1 Specifications

ManufacturerInfineon Technologies
SeriesAutomotive, AEC-Q101, OptiMOS™
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)40V
Current - Continuous Drain (Id) @ 25°C80A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs3.3mOhm @ 40A, 10V
Vgs(th) (Max) @ Id4V @ 60µA
Gate Charge (Qg) (Max) @ Vgs71nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds5720pF @ 25V
FET Feature-
Power Dissipation (Max)100W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackagePG-TDSON-8-23
Package / Case8-PowerVDFN

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