Certifications

iso9001
iso14001
icas
Delivery
security
warranty
roiginal
RoHS
UL
Millions of Electronic Parts In Stock. Price & Lead Time Quotes within 24 Hours.

IPC65R041CFDX1SA1

IPC65R041CFDX1SA1

For Reference Only

Part Number IPC65R041CFDX1SA1
PNEDA Part # IPC65R041CFDX1SA1
Description MOSFET N-CH BARE DIE
Manufacturer Infineon Technologies
Unit Price Request a Quote
In Stock 7,434
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Feb 18 - Feb 23 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

IPC65R041CFDX1SA1 Resources

Brand Infineon Technologies
ECAD Module ECAD
Mfr. Part NumberIPC65R041CFDX1SA1
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single

Payment Method

TT Unionpay paypal paypalwtcreditcard alipay wu
  • Penda is not limited to cash transfers. Checks and bill transfers are also accepted.
  • If you need the detailed invoice or tax ID,please email us.
  • Some orders may require a minimum amount of $100.00.
  • Cheque or cash on delivery, processing may take an additional 3-5 days.

Logistics Mode

TNT UPS Fedex EMS DHL
  • Delivery time: At the same day (Order deadline is 2pm, HK Time).
  • Delivery date: usually 2 to 7 working days.
  • It is unable to appoint a date of delivery.
  • Tracking number will be sent once your order has been shipped.
  • It may take up to 24 hours before carriers display the info.

Notes

  • Please confirm the specifications of the products when ordering.
  • If you have special order instructions,please note it on the ordering pages.
  • Registered users can log in to the account to view the order status.
  • You can email us to change the order details before shipment.
  • Orders cannot be canceled after shipping the packages.

At PNEDA, we strive to be the industry leader by quickly and reliably supplying high-quality electronic components to our clients.

Our approach is built around proving our clients with three key advantages:

  • Prompt Responsiveness

    Our team responds quickly to your requests, and gets to work immediately to find your parts.

  • Guaranteed Quality

    Our quality-control processes guard against counterfeits while ensuring reliability and performance.

  • Global Access

    Our worldwide network of trusted resources allows us to find and deliver the specific parts you need.

Hot search vocabulary

  • IPC65R041CFDX1SA1 Datasheet
  • where to find IPC65R041CFDX1SA1
  • Infineon Technologies

  • Infineon Technologies IPC65R041CFDX1SA1
  • IPC65R041CFDX1SA1 PDF Datasheet
  • IPC65R041CFDX1SA1 Stock

  • IPC65R041CFDX1SA1 Pinout
  • Datasheet IPC65R041CFDX1SA1
  • IPC65R041CFDX1SA1 Supplier

  • Infineon Technologies Distributor
  • IPC65R041CFDX1SA1 Price
  • IPC65R041CFDX1SA1 Distributor

IPC65R041CFDX1SA1 Specifications

ManufacturerInfineon Technologies
Series*
FET Type-
Technology-
Drain to Source Voltage (Vdss)-
Current - Continuous Drain (Id) @ 25°C-
Drive Voltage (Max Rds On, Min Rds On)-
Rds On (Max) @ Id, Vgs-
Vgs(th) (Max) @ Id-
Gate Charge (Qg) (Max) @ Vgs-
Vgs (Max)-
Input Capacitance (Ciss) (Max) @ Vds-
FET Feature-
Power Dissipation (Max)-
Operating Temperature-
Mounting Type-
Supplier Device Package-
Package / Case-

The Products You May Be Interested In

STFI4N62K3

STMicroelectronics

Manufacturer

STMicroelectronics

Series

SuperMESH3™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

620V

Current - Continuous Drain (Id) @ 25°C

3.8A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

2Ohm @ 1.9A, 10V

Vgs(th) (Max) @ Id

4.5V @ 50µA

Gate Charge (Qg) (Max) @ Vgs

22nC @ 10V

Vgs (Max)

±30V

Input Capacitance (Ciss) (Max) @ Vds

550pF @ 50V

FET Feature

-

Power Dissipation (Max)

25W (Tc)

Operating Temperature

150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

I2PAKFP (TO-281)

Package / Case

TO-262-3 Full Pack, I²Pak

IPDD60R190G7XTMA1

Infineon Technologies

Manufacturer

Infineon Technologies

Series

CoolMOS™ G7

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

600V

Current - Continuous Drain (Id) @ 25°C

13A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

190mOhm @ 4.2A, 10V

Vgs(th) (Max) @ Id

4V @ 210µA

Gate Charge (Qg) (Max) @ Vgs

18nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

718pF @ 400V

FET Feature

-

Power Dissipation (Max)

76W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

PG-HDSOP-10-1

Package / Case

10-PowerSOP Module

STS10P4LLF6

STMicroelectronics

Manufacturer

STMicroelectronics

Series

STripFET™ F6

FET Type

P-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

40V

Current - Continuous Drain (Id) @ 25°C

10A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

15mOhm @ 3A, 10V

Vgs(th) (Max) @ Id

1V @ 250µA (Min)

Gate Charge (Qg) (Max) @ Vgs

34nC @ 4.5V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

3525pF @ 25V

FET Feature

-

Power Dissipation (Max)

2.7W (Ta)

Operating Temperature

150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

8-SO

Package / Case

8-SOIC (0.154", 3.90mm Width)

APT33N90JCU2

Microsemi

Manufacturer

Microsemi Corporation

Series

CoolMOS™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

900V

Current - Continuous Drain (Id) @ 25°C

33A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

120mOhm @ 26A, 10V

Vgs(th) (Max) @ Id

3.5V @ 3mA

Gate Charge (Qg) (Max) @ Vgs

270nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

6800pF @ 100V

FET Feature

Super Junction

Power Dissipation (Max)

290W (Tc)

Operating Temperature

-40°C ~ 150°C (TJ)

Mounting Type

Chassis Mount

Supplier Device Package

SOT-227

Package / Case

SOT-227-4, miniBLOC

SKI03063

Sanken

Manufacturer

Sanken

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

30V

Current - Continuous Drain (Id) @ 25°C

40A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

6.5mOhm @ 39.5A, 10V

Vgs(th) (Max) @ Id

2.5V @ 350µA

Gate Charge (Qg) (Max) @ Vgs

24.6nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

1480pF @ 15V

FET Feature

-

Power Dissipation (Max)

64W (Tc)

Operating Temperature

150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

TO-263

Package / Case

TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

Recently Sold

GSOT05C-E3-08

GSOT05C-E3-08

Vishay Semiconductor Diodes Division

TVS DIODE 5V 16V SOT23-3

MT41J512M8RH-093:E

MT41J512M8RH-093:E

Micron Technology Inc.

IC DRAM 4G PARALLEL 78FBGA

GP1S094HCZ0F

GP1S094HCZ0F

SHARP/Socle Technology

SENSOR OPT SLOT PHOTOTRAN PCB MT

LNBH25LSPQR

LNBH25LSPQR

STMicroelectronics

IC REG CONV SAT TV 1OUT 24QFN

IHLP1212BZER1R5M11

IHLP1212BZER1R5M11

Vishay Dale

FIXED IND 1.5UH 3.8A 32 MOHM SMD

NDS331N

NDS331N

ON Semiconductor

MOSFET N-CH 20V 1.3A SSOT3

SHT21

SHT21

Sensirion AG

SENSOR HUMID/TEMP 3V I2C 2% SMD

BZX84C3V9

BZX84C3V9

ON Semiconductor

DIODE ZENER 3.9V 350MW SOT23-3

USB2517-JZX-TR

USB2517-JZX-TR

Microchip Technology

IC USB 2.0 7PORT HUB CTLR 64QFN

6TPE330MIL

6TPE330MIL

Panasonic Electronic Components

CAP TANT POLY 330UF 6.3V 2917

B360A-13-F

B360A-13-F

Diodes Incorporated

DIODE SCHOTTKY 60V 3A SMA

BZT52C8V2S-7-F

BZT52C8V2S-7-F

Diodes Incorporated

DIODE ZENER 8.2V 200MW SOD323