Certifications

iso9001
iso14001
icas
Delivery
security
warranty
roiginal
RoHS
UL
Millions of Electronic Parts In Stock. Price & Lead Time Quotes within 24 Hours.

IPC60R125CPX1SA4

IPC60R125CPX1SA4

For Reference Only

Part Number IPC60R125CPX1SA4
PNEDA Part # IPC60R125CPX1SA4
Description MOSFET N-CH BARE DIE
Manufacturer Infineon Technologies
Unit Price Request a Quote
In Stock 4,896
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Mar 20 - Mar 25 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

IPC60R125CPX1SA4 Resources

Brand Infineon Technologies
ECAD Module ECAD
Mfr. Part NumberIPC60R125CPX1SA4
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single

Payment Method

TT Unionpay paypal paypalwtcreditcard alipay wu
  • Penda is not limited to cash transfers. Checks and bill transfers are also accepted.
  • If you need the detailed invoice or tax ID,please email us.
  • Some orders may require a minimum amount of $100.00.
  • Cheque or cash on delivery, processing may take an additional 3-5 days.

Logistics Mode

TNT UPS Fedex EMS DHL
  • Delivery time: At the same day (Order deadline is 2pm, HK Time).
  • Delivery date: usually 2 to 7 working days.
  • It is unable to appoint a date of delivery.
  • Tracking number will be sent once your order has been shipped.
  • It may take up to 24 hours before carriers display the info.

Notes

  • Please confirm the specifications of the products when ordering.
  • If you have special order instructions,please note it on the ordering pages.
  • Registered users can log in to the account to view the order status.
  • You can email us to change the order details before shipment.
  • Orders cannot be canceled after shipping the packages.

At PNEDA, we strive to be the industry leader by quickly and reliably supplying high-quality electronic components to our clients.

Our approach is built around proving our clients with three key advantages:

  • Prompt Responsiveness

    Our team responds quickly to your requests, and gets to work immediately to find your parts.

  • Guaranteed Quality

    Our quality-control processes guard against counterfeits while ensuring reliability and performance.

  • Global Access

    Our worldwide network of trusted resources allows us to find and deliver the specific parts you need.

Hot search vocabulary

  • IPC60R125CPX1SA4 Datasheet
  • where to find IPC60R125CPX1SA4
  • Infineon Technologies

  • Infineon Technologies IPC60R125CPX1SA4
  • IPC60R125CPX1SA4 PDF Datasheet
  • IPC60R125CPX1SA4 Stock

  • IPC60R125CPX1SA4 Pinout
  • Datasheet IPC60R125CPX1SA4
  • IPC60R125CPX1SA4 Supplier

  • Infineon Technologies Distributor
  • IPC60R125CPX1SA4 Price
  • IPC60R125CPX1SA4 Distributor

IPC60R125CPX1SA4 Specifications

ManufacturerInfineon Technologies
Series*
FET Type-
Technology-
Drain to Source Voltage (Vdss)-
Current - Continuous Drain (Id) @ 25°C-
Drive Voltage (Max Rds On, Min Rds On)-
Rds On (Max) @ Id, Vgs-
Vgs(th) (Max) @ Id-
Gate Charge (Qg) (Max) @ Vgs-
Vgs (Max)-
Input Capacitance (Ciss) (Max) @ Vds-
FET Feature-
Power Dissipation (Max)-
Operating Temperature-
Mounting Type-
Supplier Device Package-
Package / Case-

The Products You May Be Interested In

RRS125N03TB1

Rohm Semiconductor

Manufacturer

Rohm Semiconductor

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

30V

Current - Continuous Drain (Id) @ 25°C

12.5A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

-

Rds On (Max) @ Id, Vgs

10mOhm @ 12.5A, 10V

Vgs(th) (Max) @ Id

-

Gate Charge (Qg) (Max) @ Vgs

40.5nC @ 15V

Vgs (Max)

-

Input Capacitance (Ciss) (Max) @ Vds

2300pF @ 10V

FET Feature

-

Power Dissipation (Max)

-

Operating Temperature

-

Mounting Type

Surface Mount

Supplier Device Package

8-SOP

Package / Case

8-SOIC (0.154", 3.90mm Width)

IPU60R2K0C6AKMA1

Infineon Technologies

Manufacturer

Infineon Technologies

Series

CoolMOS™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

600V

Current - Continuous Drain (Id) @ 25°C

2.4A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

2Ohm @ 760mA, 10V

Vgs(th) (Max) @ Id

3.5V @ 60µA

Gate Charge (Qg) (Max) @ Vgs

6.7nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

140pF @ 100V

FET Feature

-

Power Dissipation (Max)

22.3W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

PG-TO251-3

Package / Case

TO-251-3 Short Leads, IPak, TO-251AA

SIR616DP-T1-GE3

Vishay Siliconix

Manufacturer

Vishay Siliconix

Series

ThunderFET®

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

200V

Current - Continuous Drain (Id) @ 25°C

20.2A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

7.5V, 10V

Rds On (Max) @ Id, Vgs

50.5mOhm @ 10A, 10V

Vgs(th) (Max) @ Id

4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

28nC @ 7.5V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

1450pF @ 100V

FET Feature

-

Power Dissipation (Max)

52W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

PowerPAK® SO-8

Package / Case

PowerPAK® SO-8

ZXMP7A17GQTA

Diodes Incorporated

Manufacturer

Diodes Incorporated

Series

-

FET Type

P-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

70V

Current - Continuous Drain (Id) @ 25°C

2.6A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

160mOhm @ 2.1A, 10V

Vgs(th) (Max) @ Id

1V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

18nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

635pF @ 40V

FET Feature

-

Power Dissipation (Max)

2W (Ta)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

SOT-223

Package / Case

TO-261-4, TO-261AA

BSP295E6327T

Infineon Technologies

Manufacturer

Infineon Technologies

Series

SIPMOS®

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

60V

Current - Continuous Drain (Id) @ 25°C

1.8A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

300mOhm @ 1.8A, 10V

Vgs(th) (Max) @ Id

1.8V @ 400µA

Gate Charge (Qg) (Max) @ Vgs

17nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

368pF @ 25V

FET Feature

-

Power Dissipation (Max)

1.8W (Ta)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

PG-SOT223-4

Package / Case

TO-261-4, TO-261AA

Recently Sold

CRA2512-FZ-R020ELF

CRA2512-FZ-R020ELF

Bourns

RES 0.02 OHM 1% 3W 2512

LT1764EQ#TRPBF

LT1764EQ#TRPBF

Linear Technology/Analog Devices

IC REG LINEAR POS ADJ 3A 5DDPAK

LTM8045IY#PBF

LTM8045IY#PBF

Linear Technology/Analog Devices

DC DC CONVERTER +/-2.5 +/-15V

LT1118CST-2.5#TRPBF

LT1118CST-2.5#TRPBF

Linear Technology/Analog Devices

IC REG LIN 2.5V 800MA SOT223-3

TZR1R080A001R00

TZR1R080A001R00

Murata

CAP TRIMMER 3-8PF 25V SMD

MAX8216ESD+

MAX8216ESD+

Maxim Integrated

IC MONITOR VOLT MPU 14-SOIC

IRF9310TRPBF

IRF9310TRPBF

Infineon Technologies

MOSFET P-CH 30V 20A 8-SOIC

2N6433

2N6433

Central Semiconductor Corp

THROUGH-HOLE TRANSISTOR-SMALL SI

IHLP2525AHER1R0M01

IHLP2525AHER1R0M01

Vishay Dale

FIXED IND 1UH 7A 18.3 MOHM SMD

S14100038

S14100038

Wurth Electronics

CMC 560UH 20A 2LN TH

XC6SLX9-2TQG144C

XC6SLX9-2TQG144C

Xilinx

IC FPGA 102 I/O 144TQFP

1N5819HW-7-F

1N5819HW-7-F

Diodes Incorporated

DIODE SCHOTTKY 40V 1A SOD123