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IPC100N04S5L1R9ATMA1

IPC100N04S5L1R9ATMA1

For Reference Only

Part Number IPC100N04S5L1R9ATMA1
PNEDA Part # IPC100N04S5L1R9ATMA1
Description MOSFET N-CH 40V 100A 8TDSON
Manufacturer Infineon Technologies
Unit Price Request a Quote
In Stock 6,624
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Mar 23 - Mar 28 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

IPC100N04S5L1R9ATMA1 Resources

Brand Infineon Technologies
ECAD Module ECAD
Mfr. Part NumberIPC100N04S5L1R9ATMA1
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single

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IPC100N04S5L1R9ATMA1 Specifications

ManufacturerInfineon Technologies
SeriesOptiMOS™
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)40V
Current - Continuous Drain (Id) @ 25°C100A (Tc)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Rds On (Max) @ Id, Vgs1.9mOhm @ 50A, 10V
Vgs(th) (Max) @ Id2V @ 50µA
Gate Charge (Qg) (Max) @ Vgs81nC @ 10V
Vgs (Max)±16V
Input Capacitance (Ciss) (Max) @ Vds4310pF @ 25V
FET Feature-
Power Dissipation (Max)100W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackagePG-TDSON-8-34
Package / Case8-PowerTDFN

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