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IPC100N04S402ATMA1

IPC100N04S402ATMA1

For Reference Only

Part Number IPC100N04S402ATMA1
PNEDA Part # IPC100N04S402ATMA1
Description MOSFET N-CH 8TDSON
Manufacturer Infineon Technologies
Unit Price Request a Quote
In Stock 7,920
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Nov 28 - Dec 3 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

IPC100N04S402ATMA1 Resources

Brand Infineon Technologies
ECAD Module ECAD
Mfr. Part NumberIPC100N04S402ATMA1
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
IPC100N04S402ATMA1, IPC100N04S402ATMA1 Datasheet (Total Pages: 9, Size: 236.53 KB)
PDFIPC100N04S402ATMA1 Datasheet Cover
IPC100N04S402ATMA1 Datasheet Page 2 IPC100N04S402ATMA1 Datasheet Page 3 IPC100N04S402ATMA1 Datasheet Page 4 IPC100N04S402ATMA1 Datasheet Page 5 IPC100N04S402ATMA1 Datasheet Page 6 IPC100N04S402ATMA1 Datasheet Page 7 IPC100N04S402ATMA1 Datasheet Page 8 IPC100N04S402ATMA1 Datasheet Page 9

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IPC100N04S402ATMA1 Specifications

ManufacturerInfineon Technologies
SeriesAutomotive, AEC-Q101, OptiMOS™
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)40V
Current - Continuous Drain (Id) @ 25°C100A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs2.4mOhm @ 50A, 10V
Vgs(th) (Max) @ Id4V @ 80µA
Gate Charge (Qg) (Max) @ Vgs105nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds8100pF @ 25V
FET Feature-
Power Dissipation (Max)150W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackagePG-TDSON-8-23
Package / Case8-PowerVDFN

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