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IPB80N04S2H4ATMA2

IPB80N04S2H4ATMA2

For Reference Only

Part Number IPB80N04S2H4ATMA2
PNEDA Part # IPB80N04S2H4ATMA2
Description MOSFET N-CHANNEL_30/40V
Manufacturer Infineon Technologies
Unit Price Request a Quote
In Stock 7,596
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Mar 18 - Mar 23 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

IPB80N04S2H4ATMA2 Resources

Brand Infineon Technologies
ECAD Module ECAD
Mfr. Part NumberIPB80N04S2H4ATMA2
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
IPB80N04S2H4ATMA2, IPB80N04S2H4ATMA2 Datasheet (Total Pages: 9, Size: 190.42 KB)
PDFIPP80N04S2H4AKSA1 Datasheet Cover
IPP80N04S2H4AKSA1 Datasheet Page 2 IPP80N04S2H4AKSA1 Datasheet Page 3 IPP80N04S2H4AKSA1 Datasheet Page 4 IPP80N04S2H4AKSA1 Datasheet Page 5 IPP80N04S2H4AKSA1 Datasheet Page 6 IPP80N04S2H4AKSA1 Datasheet Page 7 IPP80N04S2H4AKSA1 Datasheet Page 8 IPP80N04S2H4AKSA1 Datasheet Page 9

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IPB80N04S2H4ATMA2 Specifications

ManufacturerInfineon Technologies
Series*
FET Type-
Technology-
Drain to Source Voltage (Vdss)-
Current - Continuous Drain (Id) @ 25°C-
Drive Voltage (Max Rds On, Min Rds On)-
Rds On (Max) @ Id, Vgs-
Vgs(th) (Max) @ Id-
Gate Charge (Qg) (Max) @ Vgs-
Vgs (Max)-
Input Capacitance (Ciss) (Max) @ Vds-
FET Feature-
Power Dissipation (Max)-
Operating Temperature-
Mounting Type-
Supplier Device Package-
Package / Case-

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Drive Voltage (Max Rds On, Min Rds On)

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Rds On (Max) @ Id, Vgs

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Vgs(th) (Max) @ Id

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Current - Continuous Drain (Id) @ 25°C

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Drive Voltage (Max Rds On, Min Rds On)

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Vgs(th) (Max) @ Id

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Gate Charge (Qg) (Max) @ Vgs

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Vgs (Max)

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Input Capacitance (Ciss) (Max) @ Vds

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Power Dissipation (Max)

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Operating Temperature

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Package / Case

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Current - Continuous Drain (Id) @ 25°C

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Drive Voltage (Max Rds On, Min Rds On)

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Rds On (Max) @ Id, Vgs

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Vgs(th) (Max) @ Id

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Gate Charge (Qg) (Max) @ Vgs

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Vgs (Max)

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Input Capacitance (Ciss) (Max) @ Vds

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Power Dissipation (Max)

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FET Type

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Current - Continuous Drain (Id) @ 25°C

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Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

26mOhm @ 20A, 10V

Vgs(th) (Max) @ Id

1V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

26nC @ 4.5V

Vgs (Max)

±16V

Input Capacitance (Ciss) (Max) @ Vds

870pF @ 25V

FET Feature

-

Power Dissipation (Max)

3.8W (Ta), 68W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Surface Mount

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D2PAK

Package / Case

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Infineon Technologies

Manufacturer

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Series

HEXFET®

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

30V

Current - Continuous Drain (Id) @ 25°C

21A (Ta), 40A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

2.5V, 10V

Rds On (Max) @ Id, Vgs

3.5mOhm @ 20A, 4.5V

Vgs(th) (Max) @ Id

1.1V @ 50µA

Gate Charge (Qg) (Max) @ Vgs

62nC @ 4.5V

Vgs (Max)

±12V

Input Capacitance (Ciss) (Max) @ Vds

3170pF @ 25V

FET Feature

-

Power Dissipation (Max)

2.7W (Ta), 37W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

PQFN (3x3)

Package / Case

8-VQFN Exposed Pad

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