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IPB80N04S2H4ATMA2

IPB80N04S2H4ATMA2

For Reference Only

Part Number IPB80N04S2H4ATMA2
PNEDA Part # IPB80N04S2H4ATMA2
Description MOSFET N-CHANNEL_30/40V
Manufacturer Infineon Technologies
Unit Price Request a Quote
In Stock 7,596
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Mar 21 - Mar 26 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

IPB80N04S2H4ATMA2 Resources

Brand Infineon Technologies
ECAD Module ECAD
Mfr. Part NumberIPB80N04S2H4ATMA2
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
IPB80N04S2H4ATMA2, IPB80N04S2H4ATMA2 Datasheet (Total Pages: 9, Size: 190.42 KB)
PDFIPP80N04S2H4AKSA1 Datasheet Cover
IPP80N04S2H4AKSA1 Datasheet Page 2 IPP80N04S2H4AKSA1 Datasheet Page 3 IPP80N04S2H4AKSA1 Datasheet Page 4 IPP80N04S2H4AKSA1 Datasheet Page 5 IPP80N04S2H4AKSA1 Datasheet Page 6 IPP80N04S2H4AKSA1 Datasheet Page 7 IPP80N04S2H4AKSA1 Datasheet Page 8 IPP80N04S2H4AKSA1 Datasheet Page 9

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IPB80N04S2H4ATMA2 Specifications

ManufacturerInfineon Technologies
Series*
FET Type-
Technology-
Drain to Source Voltage (Vdss)-
Current - Continuous Drain (Id) @ 25°C-
Drive Voltage (Max Rds On, Min Rds On)-
Rds On (Max) @ Id, Vgs-
Vgs(th) (Max) @ Id-
Gate Charge (Qg) (Max) @ Vgs-
Vgs (Max)-
Input Capacitance (Ciss) (Max) @ Vds-
FET Feature-
Power Dissipation (Max)-
Operating Temperature-
Mounting Type-
Supplier Device Package-
Package / Case-

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Current - Continuous Drain (Id) @ 25°C

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Drive Voltage (Max Rds On, Min Rds On)

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Rds On (Max) @ Id, Vgs

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Current - Continuous Drain (Id) @ 25°C

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