IPB65R190C6ATMA1
For Reference Only
| Part Number | IPB65R190C6ATMA1 |
| PNEDA Part # | IPB65R190C6ATMA1 |
| Description | MOSFET N-CH 650V 20.2A TO263 |
| Manufacturer | Infineon Technologies |
| Unit Price | Request a Quote |
| In Stock | 2,268 |
| Warehouses | Shipped from Hong Kong SAR |
| Estimated Delivery | Apr 3 - Apr 8 (Choose Expedited Shipping) |
| Guarantee | Up to 1 year [PNEDA-Warranty]* |
|
Free shipping on orders over $100. PNEDA is willing to provide you with better services.
|
|
|
|
|
IPB65R190C6ATMA1 Resources
| Brand | Infineon Technologies |
| ECAD Module |
|
| Mfr. Part Number | IPB65R190C6ATMA1 |
| Category | Semiconductors › Transistors › Transistors - FETs, MOSFETs - Single |
| Datasheet |
Payment Method
- Penda is not limited to cash transfers. Checks and bill transfers are also accepted.
- If you need the detailed invoice or tax ID,please email us.
- Some orders may require a minimum amount of $100.00.
- Cheque or cash on delivery, processing may take an additional 3-5 days.
Logistics Mode
- Delivery time: At the same day (Order deadline is 2pm, HK Time).
- Delivery date: usually 2 to 7 working days.
- It is unable to appoint a date of delivery.
- Tracking number will be sent once your order has been shipped.
- It may take up to 24 hours before carriers display the info.
Notes
- Please confirm the specifications of the products when ordering.
- If you have special order instructions,please note it on the ordering pages.
- Registered users can log in to the account to view the order status.
- You can email us to change the order details before shipment.
- Orders cannot be canceled after shipping the packages.
At PNEDA, we strive to be the industry leader by quickly and reliably supplying high-quality electronic components to our clients.
Our approach is built around proving our clients with three key advantages:
Prompt Responsiveness
Our team responds quickly to your requests, and gets to work immediately to find your parts.
Guaranteed Quality
Our quality-control processes guard against counterfeits while ensuring reliability and performance.
Global Access
Our worldwide network of trusted resources allows us to find and deliver the specific parts you need.
Hot search vocabulary
- IPB65R190C6ATMA1 Datasheet
- where to find IPB65R190C6ATMA1
- Infineon Technologies
- Infineon Technologies IPB65R190C6ATMA1
- IPB65R190C6ATMA1 PDF Datasheet
- IPB65R190C6ATMA1 Stock
- IPB65R190C6ATMA1 Pinout
- Datasheet IPB65R190C6ATMA1
- IPB65R190C6ATMA1 Supplier
- Infineon Technologies Distributor
- IPB65R190C6ATMA1 Price
- IPB65R190C6ATMA1 Distributor
IPB65R190C6ATMA1 Specifications
| Manufacturer | Infineon Technologies |
| Series | CoolMOS™ |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 650V |
| Current - Continuous Drain (Id) @ 25°C | 20.2A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Rds On (Max) @ Id, Vgs | 190mOhm @ 7.3A, 10V |
| Vgs(th) (Max) @ Id | 3.5V @ 730µA |
| Gate Charge (Qg) (Max) @ Vgs | 73nC @ 10V |
| Vgs (Max) | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 1620pF @ 100V |
| FET Feature | - |
| Power Dissipation (Max) | 151W (Tc) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | D²PAK (TO-263AB) |
| Package / Case | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
The Products You May Be Interested In
|
Manufacturer ON Semiconductor Series SuperFET™ FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 600V Current - Continuous Drain (Id) @ 25°C 47A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 73mOhm @ 23.5A, 10V Vgs(th) (Max) @ Id 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs 270nC @ 10V Vgs (Max) ±30V Input Capacitance (Ciss) (Max) @ Vds 8000pF @ 25V FET Feature - Power Dissipation (Max) 417W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Through Hole Supplier Device Package TO-247-3 Package / Case TO-247-3 |
Manufacturer Alpha & Omega Semiconductor Inc. Series - FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 300V Current - Continuous Drain (Id) @ 25°C 11.5A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 420mOhm @ 6A, 10V Vgs(th) (Max) @ Id 4.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs 16nC @ 10V Vgs (Max) ±30V Input Capacitance (Ciss) (Max) @ Vds 790pF @ 25V FET Feature - Power Dissipation (Max) 36W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Through Hole Supplier Device Package TO-220-3F Package / Case TO-220-3 Full Pack |
Manufacturer Diodes Incorporated Series - FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 12V Current - Continuous Drain (Id) @ 25°C 9.3A (Ta) Drive Voltage (Max Rds On, Min Rds On) 1.2V, 2.5V Rds On (Max) @ Id, Vgs 10mOhm @ 9.7A, 4.5V Vgs(th) (Max) @ Id 800mV @ 250µA Gate Charge (Qg) (Max) @ Vgs 50.6nC @ 8V Vgs (Max) ±8V Input Capacitance (Ciss) (Max) @ Vds 2426pF @ 10V FET Feature - Power Dissipation (Max) 680mW (Ta) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package SC-59 Package / Case TO-236-3, SC-59, SOT-23-3 |
Manufacturer Toshiba Semiconductor and Storage Series DTMOSIV FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 600V Current - Continuous Drain (Id) @ 25°C 100A (Ta) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 18mOhm @ 50A, 10V Vgs(th) (Max) @ Id 3.7V @ 5mA Gate Charge (Qg) (Max) @ Vgs 360nC @ 10V Vgs (Max) ±30V Input Capacitance (Ciss) (Max) @ Vds 15000pF @ 30V FET Feature Super Junction Power Dissipation (Max) 797W (Tc) Operating Temperature 150°C (TJ) Mounting Type Through Hole Supplier Device Package TO-3P(L) Package / Case TO-3PL |
Manufacturer Vishay Siliconix Series - FET Type P-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 60V Current - Continuous Drain (Id) @ 25°C 6.7A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 500mOhm @ 4A, 10V Vgs(th) (Max) @ Id 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs 12nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 270pF @ 25V FET Feature - Power Dissipation (Max) 43W (Tc) Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Through Hole Supplier Device Package TO-220AB Package / Case TO-220-3 |
