Certifications

iso9001
iso14001
icas
Delivery
security
warranty
roiginal
RoHS
UL
Millions of Electronic Parts In Stock. Price & Lead Time Quotes within 24 Hours.

IPB60R380P6ATMA1

IPB60R380P6ATMA1

For Reference Only

Part Number IPB60R380P6ATMA1
PNEDA Part # IPB60R380P6ATMA1
Description MOSFET N-CH 600V TO263-3
Manufacturer Infineon Technologies
Unit Price Request a Quote
In Stock 7,776
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Apr 21 - Apr 26 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

IPB60R380P6ATMA1 Resources

Brand Infineon Technologies
ECAD Module ECAD
Mfr. Part NumberIPB60R380P6ATMA1
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
IPB60R380P6ATMA1, IPB60R380P6ATMA1 Datasheet (Total Pages: 18, Size: 2,239.04 KB)
PDFIPB60R380P6ATMA1 Datasheet Cover
IPB60R380P6ATMA1 Datasheet Page 2 IPB60R380P6ATMA1 Datasheet Page 3 IPB60R380P6ATMA1 Datasheet Page 4 IPB60R380P6ATMA1 Datasheet Page 5 IPB60R380P6ATMA1 Datasheet Page 6 IPB60R380P6ATMA1 Datasheet Page 7 IPB60R380P6ATMA1 Datasheet Page 8 IPB60R380P6ATMA1 Datasheet Page 9 IPB60R380P6ATMA1 Datasheet Page 10 IPB60R380P6ATMA1 Datasheet Page 11

Payment Method

TT Unionpay paypal paypalwtcreditcard alipay wu
  • Penda is not limited to cash transfers. Checks and bill transfers are also accepted.
  • If you need the detailed invoice or tax ID,please email us.
  • Some orders may require a minimum amount of $100.00.
  • Cheque or cash on delivery, processing may take an additional 3-5 days.

Logistics Mode

TNT UPS Fedex EMS DHL
  • Delivery time: At the same day (Order deadline is 2pm, HK Time).
  • Delivery date: usually 2 to 7 working days.
  • It is unable to appoint a date of delivery.
  • Tracking number will be sent once your order has been shipped.
  • It may take up to 24 hours before carriers display the info.

Notes

  • Please confirm the specifications of the products when ordering.
  • If you have special order instructions,please note it on the ordering pages.
  • Registered users can log in to the account to view the order status.
  • You can email us to change the order details before shipment.
  • Orders cannot be canceled after shipping the packages.

At PNEDA, we strive to be the industry leader by quickly and reliably supplying high-quality electronic components to our clients.

Our approach is built around proving our clients with three key advantages:

  • Prompt Responsiveness

    Our team responds quickly to your requests, and gets to work immediately to find your parts.

  • Guaranteed Quality

    Our quality-control processes guard against counterfeits while ensuring reliability and performance.

  • Global Access

    Our worldwide network of trusted resources allows us to find and deliver the specific parts you need.

Hot search vocabulary

  • IPB60R380P6ATMA1 Datasheet
  • where to find IPB60R380P6ATMA1
  • Infineon Technologies

  • Infineon Technologies IPB60R380P6ATMA1
  • IPB60R380P6ATMA1 PDF Datasheet
  • IPB60R380P6ATMA1 Stock

  • IPB60R380P6ATMA1 Pinout
  • Datasheet IPB60R380P6ATMA1
  • IPB60R380P6ATMA1 Supplier

  • Infineon Technologies Distributor
  • IPB60R380P6ATMA1 Price
  • IPB60R380P6ATMA1 Distributor

IPB60R380P6ATMA1 Specifications

ManufacturerInfineon Technologies
SeriesCoolMOS™ P6
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)600V
Current - Continuous Drain (Id) @ 25°C10.6A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs380mOhm @ 3.8A, 10V
Vgs(th) (Max) @ Id4.5V @ 320µA
Gate Charge (Qg) (Max) @ Vgs19nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds877pF @ 100V
FET Feature-
Power Dissipation (Max)83W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageD²PAK (TO-263AB)
Package / CaseTO-263-3, D²Pak (2 Leads + Tab), TO-263AB

The Products You May Be Interested In

NVATS5A113PLZT4G

ON Semiconductor

Manufacturer

ON Semiconductor

Series

-

FET Type

P-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

60V

Current - Continuous Drain (Id) @ 25°C

38A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

4V, 10V

Rds On (Max) @ Id, Vgs

29.5mOhm @ 18A, 10V

Vgs(th) (Max) @ Id

2.6V @ 1mA

Gate Charge (Qg) (Max) @ Vgs

55nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

2400pF @ 20V

FET Feature

-

Power Dissipation (Max)

60W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

ATPAK

Package / Case

TO-252-3, DPak (2 Leads + Tab), SC-63

FDP2532

ON Semiconductor

Manufacturer

ON Semiconductor

Series

PowerTrench®

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

150V

Current - Continuous Drain (Id) @ 25°C

8A (Ta), 79A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

6V, 10V

Rds On (Max) @ Id, Vgs

16mOhm @ 33A, 10V

Vgs(th) (Max) @ Id

4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

107nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

5870pF @ 25V

FET Feature

-

Power Dissipation (Max)

310W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-220-3

Package / Case

TO-220-3

IRFH5004TRPBF

Infineon Technologies

Manufacturer

Infineon Technologies

Series

HEXFET®

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

40V

Current - Continuous Drain (Id) @ 25°C

28A (Ta), 100A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

2.6mOhm @ 50A, 10V

Vgs(th) (Max) @ Id

4V @ 150µA

Gate Charge (Qg) (Max) @ Vgs

110nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

4490pF @ 20V

FET Feature

-

Power Dissipation (Max)

3.6W (Ta), 156W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

8-PQFN (5x6)

Package / Case

8-PowerVDFN

Manufacturer

NXP USA Inc.

Series

TrenchMOS™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

55V

Current - Continuous Drain (Id) @ 25°C

100A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

7mOhm @ 25A, 10V

Vgs(th) (Max) @ Id

2.8V @ 1mA

Gate Charge (Qg) (Max) @ Vgs

82nC @ 10V

Vgs (Max)

±16V

Input Capacitance (Ciss) (Max) @ Vds

5160pF @ 25V

FET Feature

-

Power Dissipation (Max)

158W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-220AB

Package / Case

TO-220-3

AO3418

Alpha & Omega Semiconductor

Manufacturer

Alpha & Omega Semiconductor Inc.

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

30V

Current - Continuous Drain (Id) @ 25°C

3.8A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

2.5V, 10V

Rds On (Max) @ Id, Vgs

60mOhm @ 3.8A, 10V

Vgs(th) (Max) @ Id

1.8V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

3.2nC @ 4.5V

Vgs (Max)

±12V

Input Capacitance (Ciss) (Max) @ Vds

270pF @ 15V

FET Feature

-

Power Dissipation (Max)

1.4W (Ta)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

SOT-23-3L

Package / Case

TO-236-3, SC-59, SOT-23-3

Recently Sold

0ZCJ0025AF2E

0ZCJ0025AF2E

Bel Fuse

PTC RESET FUSE 24V 250MA 1206

MAX9100EUK+T

MAX9100EUK+T

Maxim Integrated

IC COMPARATOR R-R SOT23-5

MIC2026-1YM

MIC2026-1YM

Microchip Technology

IC PW DIST SW DUAL 8SOIC

MBR130LSFT1G

MBR130LSFT1G

ON Semiconductor

DIODE SCHOTTKY 30V 1A SOD123L

FXMA2102UMX

FXMA2102UMX

ON Semiconductor

IC TRNSLTR BIDIRECTIONAL 8MLP

TC4426AEOA

TC4426AEOA

Microchip Technology

IC MOSFET DVR 1.5A DUAL HS 8SOIC

CY2309SXI-1H

CY2309SXI-1H

Cypress Semiconductor

IC CLK ZDB 9OUT 133MHZ 16SOIC

1SS355VMTE-17

1SS355VMTE-17

Rohm Semiconductor

DIODE GEN PURP 80V 100MA UMD2

AD9745BCPZRL

AD9745BCPZRL

Analog Devices

IC DAC 12BIT A-OUT 72LFCSP

BC807-16LT1G

BC807-16LT1G

ON Semiconductor

TRANS PNP 45V 0.5A SOT-23

ATMEGA8L-8PU

ATMEGA8L-8PU

Microchip Technology

IC MCU 8BIT 8KB FLASH 28DIP

ADG5408BRUZ

ADG5408BRUZ

Analog Devices

IC MULTIPLEXER 8X1 16TSSOP