IPB60R299CPATMA1
For Reference Only
| Part Number | IPB60R299CPATMA1 |
| PNEDA Part # | IPB60R299CPATMA1 |
| Description | MOSFET N-CH 600V 11A TO-263 |
| Manufacturer | Infineon Technologies |
| Unit Price | Request a Quote |
| In Stock | 3,204 |
| Warehouses | Shipped from Hong Kong SAR |
| Estimated Delivery | Mar 30 - Apr 4 (Choose Expedited Shipping) |
| Guarantee | Up to 1 year [PNEDA-Warranty]* |
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Free shipping on orders over $100. PNEDA is willing to provide you with better services.
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IPB60R299CPATMA1 Resources
| Brand | Infineon Technologies |
| ECAD Module |
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| Mfr. Part Number | IPB60R299CPATMA1 |
| Category | Semiconductors › Transistors › Transistors - FETs, MOSFETs - Single |
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IPB60R299CPATMA1 Specifications
| Manufacturer | Infineon Technologies |
| Series | CoolMOS™ |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 600V |
| Current - Continuous Drain (Id) @ 25°C | 11A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Rds On (Max) @ Id, Vgs | 299mOhm @ 6.6A, 10V |
| Vgs(th) (Max) @ Id | 3.5V @ 440µA |
| Gate Charge (Qg) (Max) @ Vgs | 29nC @ 10V |
| Vgs (Max) | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 1100pF @ 100V |
| FET Feature | - |
| Power Dissipation (Max) | 96W (Tc) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | PG-TO263-3-2 |
| Package / Case | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Manufacturer Taiwan Semiconductor Corporation Series - FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 700V Current - Continuous Drain (Id) @ 25°C 6A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 750mOhm @ 1.8A, 10V Vgs(th) (Max) @ Id 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs 10.7nC @ 10V Vgs (Max) ±30V Input Capacitance (Ciss) (Max) @ Vds 555pF @ 100V FET Feature - Power Dissipation (Max) 62.5W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Through Hole Supplier Device Package TO-251 (IPAK) Package / Case TO-251-3 Short Leads, IPak, TO-251AA |
Manufacturer Infineon Technologies Series HEXFET® FET Type P-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 150V Current - Continuous Drain (Id) @ 25°C 13A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 290mOhm @ 6.6A, 10V Vgs(th) (Max) @ Id 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs 66nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 860pF @ 25V FET Feature - Power Dissipation (Max) 3.8W (Ta), 110W (Tc) Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Through Hole Supplier Device Package TO-262 Package / Case TO-262-3 Long Leads, I²Pak, TO-262AA |
Manufacturer Alpha & Omega Semiconductor Inc. Series - FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 75V Current - Continuous Drain (Id) @ 25°C 2.5A (Ta), 10A (Tc) Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V Rds On (Max) @ Id, Vgs 130mOhm @ 5A, 10V Vgs(th) (Max) @ Id 2.4V @ 250µA Gate Charge (Qg) (Max) @ Vgs 9nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 280pF @ 37.5V FET Feature - Power Dissipation (Max) 2.1W (Ta), 28.5W (Tc) Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Surface Mount Supplier Device Package TO-252, (D-Pak) Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63 |
