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IPB35N12S3L26ATMA1

IPB35N12S3L26ATMA1

For Reference Only

Part Number IPB35N12S3L26ATMA1
PNEDA Part # IPB35N12S3L26ATMA1
Description MOSFET N-CHANNEL_100+
Manufacturer Infineon Technologies
Unit Price Request a Quote
In Stock 7,002
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Mar 23 - Mar 28 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

IPB35N12S3L26ATMA1 Resources

Brand Infineon Technologies
ECAD Module ECAD
Mfr. Part NumberIPB35N12S3L26ATMA1
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single

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IPB35N12S3L26ATMA1 Specifications

ManufacturerInfineon Technologies
Series*
FET Type-
Technology-
Drain to Source Voltage (Vdss)-
Current - Continuous Drain (Id) @ 25°C-
Drive Voltage (Max Rds On, Min Rds On)-
Rds On (Max) @ Id, Vgs-
Vgs(th) (Max) @ Id-
Gate Charge (Qg) (Max) @ Vgs-
Vgs (Max)-
Input Capacitance (Ciss) (Max) @ Vds-
FET Feature-
Power Dissipation (Max)-
Operating Temperature-
Mounting Type-
Supplier Device Package-
Package / Case-

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