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IPB160N04S4H1ATMA1

IPB160N04S4H1ATMA1

For Reference Only

Part Number IPB160N04S4H1ATMA1
PNEDA Part # IPB160N04S4H1ATMA1
Description MOSFET N-CH 40V 160A TO263-7
Manufacturer Infineon Technologies
Unit Price Request a Quote
In Stock 21,762
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Mar 31 - Apr 5 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

IPB160N04S4H1ATMA1 Resources

Brand Infineon Technologies
ECAD Module ECAD
Mfr. Part NumberIPB160N04S4H1ATMA1
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single

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IPB160N04S4H1ATMA1 Specifications

ManufacturerInfineon Technologies
SeriesOptiMOS™
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)40V
Current - Continuous Drain (Id) @ 25°C160A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs1.6mOhm @ 100A, 10V
Vgs(th) (Max) @ Id4V @ 110µA
Gate Charge (Qg) (Max) @ Vgs137nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds10920pF @ 25V
FET Feature-
Power Dissipation (Max)167W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackagePG-TO263-7-3
Package / CaseTO-263-7, D²Pak (6 Leads + Tab)

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