Certifications

iso9001
iso14001
icas
Delivery
security
warranty
roiginal
RoHS
UL
Millions of Electronic Parts In Stock. Price & Lead Time Quotes within 24 Hours.

IPB147N03LGATMA1

IPB147N03LGATMA1

For Reference Only

Part Number IPB147N03LGATMA1
PNEDA Part # IPB147N03LGATMA1
Description MOSFET N-CH 30V 20A TO263-3
Manufacturer Infineon Technologies
Unit Price Request a Quote
In Stock 8,748
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Mar 20 - Mar 25 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

IPB147N03LGATMA1 Resources

Brand Infineon Technologies
ECAD Module ECAD
Mfr. Part NumberIPB147N03LGATMA1
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
IPB147N03LGATMA1, IPB147N03LGATMA1 Datasheet (Total Pages: 10, Size: 740.97 KB)
PDFIPB147N03LGATMA1 Datasheet Cover
IPB147N03LGATMA1 Datasheet Page 2 IPB147N03LGATMA1 Datasheet Page 3 IPB147N03LGATMA1 Datasheet Page 4 IPB147N03LGATMA1 Datasheet Page 5 IPB147N03LGATMA1 Datasheet Page 6 IPB147N03LGATMA1 Datasheet Page 7 IPB147N03LGATMA1 Datasheet Page 8 IPB147N03LGATMA1 Datasheet Page 9 IPB147N03LGATMA1 Datasheet Page 10

Payment Method

TT Unionpay paypal paypalwtcreditcard alipay wu
  • Penda is not limited to cash transfers. Checks and bill transfers are also accepted.
  • If you need the detailed invoice or tax ID,please email us.
  • Some orders may require a minimum amount of $100.00.
  • Cheque or cash on delivery, processing may take an additional 3-5 days.

Logistics Mode

TNT UPS Fedex EMS DHL
  • Delivery time: At the same day (Order deadline is 2pm, HK Time).
  • Delivery date: usually 2 to 7 working days.
  • It is unable to appoint a date of delivery.
  • Tracking number will be sent once your order has been shipped.
  • It may take up to 24 hours before carriers display the info.

Notes

  • Please confirm the specifications of the products when ordering.
  • If you have special order instructions,please note it on the ordering pages.
  • Registered users can log in to the account to view the order status.
  • You can email us to change the order details before shipment.
  • Orders cannot be canceled after shipping the packages.

At PNEDA, we strive to be the industry leader by quickly and reliably supplying high-quality electronic components to our clients.

Our approach is built around proving our clients with three key advantages:

  • Prompt Responsiveness

    Our team responds quickly to your requests, and gets to work immediately to find your parts.

  • Guaranteed Quality

    Our quality-control processes guard against counterfeits while ensuring reliability and performance.

  • Global Access

    Our worldwide network of trusted resources allows us to find and deliver the specific parts you need.

Hot search vocabulary

  • IPB147N03LGATMA1 Datasheet
  • where to find IPB147N03LGATMA1
  • Infineon Technologies

  • Infineon Technologies IPB147N03LGATMA1
  • IPB147N03LGATMA1 PDF Datasheet
  • IPB147N03LGATMA1 Stock

  • IPB147N03LGATMA1 Pinout
  • Datasheet IPB147N03LGATMA1
  • IPB147N03LGATMA1 Supplier

  • Infineon Technologies Distributor
  • IPB147N03LGATMA1 Price
  • IPB147N03LGATMA1 Distributor

IPB147N03LGATMA1 Specifications

ManufacturerInfineon Technologies
SeriesOptiMOS™
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)30V
Current - Continuous Drain (Id) @ 25°C20A (Tc)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Rds On (Max) @ Id, Vgs14.7mOhm @ 20A, 10V
Vgs(th) (Max) @ Id2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs10nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds1000pF @ 15V
FET Feature-
Power Dissipation (Max)31W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageD²PAK (TO-263AB)
Package / CaseTO-263-3, D²Pak (2 Leads + Tab), TO-263AB

The Products You May Be Interested In

Manufacturer

IXYS

Series

HiPerFET™, PolarP2™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

150V

Current - Continuous Drain (Id) @ 25°C

180A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

11mOhm @ 90A, 10V

Vgs(th) (Max) @ Id

5V @ 4mA

Gate Charge (Qg) (Max) @ Vgs

240nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

7000pF @ 25V

FET Feature

-

Power Dissipation (Max)

830W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

PLUS247™-3

Package / Case

TO-247-3

SSM3J46CTB(TPL3)

Toshiba Semiconductor and Storage

Manufacturer

Toshiba Semiconductor and Storage

Series

U-MOSVI

FET Type

P-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

20V

Current - Continuous Drain (Id) @ 25°C

2A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

1.5V, 4.5V

Rds On (Max) @ Id, Vgs

103mOhm @ 1.5A, 4.5V

Vgs(th) (Max) @ Id

1V @ 1mA

Gate Charge (Qg) (Max) @ Vgs

4.7nC @ 4.5V

Vgs (Max)

±8V

Input Capacitance (Ciss) (Max) @ Vds

290pF @ 10V

FET Feature

-

Power Dissipation (Max)

-

Operating Temperature

150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

CST3B

Package / Case

3-SMD, No Lead

FDD86367-F085

ON Semiconductor

Manufacturer

ON Semiconductor

Series

Automotive, AEC-Q101, PowerTrench®

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

80V

Current - Continuous Drain (Id) @ 25°C

100A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

4.2mOhm @ 80A, 10V

Vgs(th) (Max) @ Id

4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

88nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

4840pF @ 40V

FET Feature

-

Power Dissipation (Max)

227W (Tj)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

D-PAK (TO-252)

Package / Case

TO-252-3, DPak (2 Leads + Tab), SC-63

IRFR1205TRLPBF

Infineon Technologies

Manufacturer

Infineon Technologies

Series

HEXFET®

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

55V

Current - Continuous Drain (Id) @ 25°C

44A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

27mOhm @ 26A, 10V

Vgs(th) (Max) @ Id

4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

65nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

1300pF @ 25V

FET Feature

-

Power Dissipation (Max)

107W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

D-Pak

Package / Case

TO-252-3, DPak (2 Leads + Tab), SC-63

AO6415L

Alpha & Omega Semiconductor

Manufacturer

Alpha & Omega Semiconductor Inc.

Series

-

FET Type

P-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

20V

Current - Continuous Drain (Id) @ 25°C

3.3A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

2.5V, 10V

Rds On (Max) @ Id, Vgs

75mOhm @ 3.3A, 10V

Vgs(th) (Max) @ Id

1.4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

6nC @ 4.5V

Vgs (Max)

±12V

Input Capacitance (Ciss) (Max) @ Vds

620pF @ 10V

FET Feature

-

Power Dissipation (Max)

1.25W (Ta)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

6-TSOP

Package / Case

SC-74, SOT-457

Recently Sold

ATMEGA328P-AU

ATMEGA328P-AU

Microchip Technology

IC MCU 8BIT 32KB FLASH 32TQFP

FDMF6708N

FDMF6708N

ON Semiconductor

MODULE DRMOS 50A 40PQFN

TAJC226K025RNJ

TAJC226K025RNJ

CAP TANT 22UF 10% 25V 2312

LM348DT

LM348DT

STMicroelectronics

IC OPAMP GP 4 CIRCUIT 14SO

SMBJ7.0CA-E3/52

SMBJ7.0CA-E3/52

Vishay Semiconductor Diodes Division

TVS DIODE 7V 12V DO214AA

2N6433

2N6433

Central Semiconductor Corp

THROUGH-HOLE TRANSISTOR-SMALL SI

SHT21

SHT21

Sensirion AG

SENSOR HUMID/TEMP 3V I2C 2% SMD

DTC114EM3T5G

DTC114EM3T5G

ON Semiconductor

TRANS PREBIAS NPN 260MW SOT723

TR2/TCP1.25-R

TR2/TCP1.25-R

Eaton - Electronics Division

FUSE BRD MNT 1.25A 250VAC 2SMD

HCPL-0631-500E

HCPL-0631-500E

Broadcom

OPTOISO 3.75KV 2CH OPEN COLL 8SO

SMBJ33CA

SMBJ33CA

Semtech

1-LINE 33V 11.3A TVS DO-214AA

PI3VDP411LSRZBE

PI3VDP411LSRZBE

Diodes Incorporated

IC DEMULTIPLEXER 48TQFN