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IPB147N03LGATMA1

IPB147N03LGATMA1

For Reference Only

Part Number IPB147N03LGATMA1
PNEDA Part # IPB147N03LGATMA1
Description MOSFET N-CH 30V 20A TO263-3
Manufacturer Infineon Technologies
Unit Price Request a Quote
In Stock 8,748
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Mar 20 - Mar 25 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

IPB147N03LGATMA1 Resources

Brand Infineon Technologies
ECAD Module ECAD
Mfr. Part NumberIPB147N03LGATMA1
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
IPB147N03LGATMA1, IPB147N03LGATMA1 Datasheet (Total Pages: 10, Size: 740.97 KB)
PDFIPB147N03LGATMA1 Datasheet Cover
IPB147N03LGATMA1 Datasheet Page 2 IPB147N03LGATMA1 Datasheet Page 3 IPB147N03LGATMA1 Datasheet Page 4 IPB147N03LGATMA1 Datasheet Page 5 IPB147N03LGATMA1 Datasheet Page 6 IPB147N03LGATMA1 Datasheet Page 7 IPB147N03LGATMA1 Datasheet Page 8 IPB147N03LGATMA1 Datasheet Page 9 IPB147N03LGATMA1 Datasheet Page 10

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IPB147N03LGATMA1 Specifications

ManufacturerInfineon Technologies
SeriesOptiMOS™
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)30V
Current - Continuous Drain (Id) @ 25°C20A (Tc)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Rds On (Max) @ Id, Vgs14.7mOhm @ 20A, 10V
Vgs(th) (Max) @ Id2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs10nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds1000pF @ 15V
FET Feature-
Power Dissipation (Max)31W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageD²PAK (TO-263AB)
Package / CaseTO-263-3, D²Pak (2 Leads + Tab), TO-263AB

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